Laser annealing of thin film polycrystalline silicon solar cell
Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of the...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2013-11-01
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| Series: | EPJ Photovoltaics |
| Online Access: | http://dx.doi.org/10.1051/epjpv/2013019 |
| _version_ | 1798028600013750272 |
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| author | Chowdhury A. Bahouka A. Steffens S. Schneider J. Dore J. Mermet F. Slaoui A. |
| author_facet | Chowdhury A. Bahouka A. Steffens S. Schneider J. Dore J. Mermet F. Slaoui A. |
| author_sort | Chowdhury A. |
| collection | DOAJ |
| description | Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed. |
| first_indexed | 2024-04-11T19:11:41Z |
| format | Article |
| id | doaj.art-4b8287a92cba4ebaae5ed4a4ec14405a |
| institution | Directory Open Access Journal |
| issn | 2105-0716 |
| language | English |
| last_indexed | 2024-04-11T19:11:41Z |
| publishDate | 2013-11-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Photovoltaics |
| spelling | doaj.art-4b8287a92cba4ebaae5ed4a4ec14405a2022-12-22T04:07:36ZengEDP SciencesEPJ Photovoltaics2105-07162013-11-0144510810.1051/epjpv/2013019Laser annealing of thin film polycrystalline silicon solar cellChowdhury A.Bahouka A.Steffens S.Schneider J.Dore J.Mermet F.Slaoui A.Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.http://dx.doi.org/10.1051/epjpv/2013019 |
| spellingShingle | Chowdhury A. Bahouka A. Steffens S. Schneider J. Dore J. Mermet F. Slaoui A. Laser annealing of thin film polycrystalline silicon solar cell EPJ Photovoltaics |
| title | Laser annealing of thin film polycrystalline silicon solar cell |
| title_full | Laser annealing of thin film polycrystalline silicon solar cell |
| title_fullStr | Laser annealing of thin film polycrystalline silicon solar cell |
| title_full_unstemmed | Laser annealing of thin film polycrystalline silicon solar cell |
| title_short | Laser annealing of thin film polycrystalline silicon solar cell |
| title_sort | laser annealing of thin film polycrystalline silicon solar cell |
| url | http://dx.doi.org/10.1051/epjpv/2013019 |
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