TOPICAL REVIEW: Spin current, spin accumulation and spin Hall effect

TOPICAL REVIEW: Spin current, spin accumulation and spin Hall effect

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obt...

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Bibliographic Details
Main Author: Saburo Takahashi and Sadamichi Maekawa
Format: Article
Language:English
Published: Taylor & Francis Group 2008-01-01
Series:Science and Technology of Advanced Materials
Subjects:
spin polarized transport
spin injection
spin accumulation
spin current
spin detection
spin Hall effect
spin-orbit interaction
spin diffusion length
Online Access:http://www.iop.org/EJ/abstract/1468-6996/9/1/014105
Description
Summary:Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.
ISSN:1468-6996
1878-5514

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