The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer
Random lasers have attracted much attention in recent years owing to their advantages of a simple fabrication process, low processing cost, and material flexibility for any lasing wavelengths. They provide a roadmap for the design of ultra-bright lighting, displays, etc. However, the threshold reduc...
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| Format: | Article |
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MDPI AG
2024-02-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/11/2/168 |
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| author | Yanyan Huo Ke Sun Yuqian Zhang Weihao Liu Junkun Wang Yuan Wan Lina Zhao Tingyin Ning Zhen Li Yingying Ren |
| author_facet | Yanyan Huo Ke Sun Yuqian Zhang Weihao Liu Junkun Wang Yuan Wan Lina Zhao Tingyin Ning Zhen Li Yingying Ren |
| author_sort | Yanyan Huo |
| collection | DOAJ |
| description | Random lasers have attracted much attention in recent years owing to their advantages of a simple fabrication process, low processing cost, and material flexibility for any lasing wavelengths. They provide a roadmap for the design of ultra-bright lighting, displays, etc. However, the threshold reduction in random nanolasers remains a challenge in practical applications. In this work, lower-threshold random laser action from monolayer molybdenum disulfide film-encapsulated Au nanoparticles (MoS<sub>2</sub>/Au NPs) is demonstrated. The observed laser action of the MoS<sub>2</sub>/Au NPs shows a lower threshold of about 0.564 µJ/mm<sup>2</sup>, which is about 46.2% lower than the threshold of random lasers based on Au NPs. We proposed that the charge transfer between MoS<sub>2</sub> and the gain material is the main reason for the reduction in the random laser threshold. The finite-difference time-domain (FDTD) method was used to calculate the lasing action of these two nanostructures. When charge transfer is taken into account, the theoretically calculated threshold of the MoS<sub>2</sub>/Au NPs is reduced by 46.8% compared to Au NP samples, which is consistent with the experimental results. This study provides a new mechanism to achieve low-threshold and high-quality random lasers, which has the potential to facilitate the application of random lasers and the development of high-performance optoelectronic devices. |
| first_indexed | 2024-03-07T22:16:47Z |
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| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-07T22:16:47Z |
| publishDate | 2024-02-01 |
| publisher | MDPI AG |
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| series | Photonics |
| spelling | doaj.art-4c3401d671324c8bb213b0e29483b3462024-02-23T15:31:43ZengMDPI AGPhotonics2304-67322024-02-0111216810.3390/photonics11020168The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge TransferYanyan Huo0Ke Sun1Yuqian Zhang2Weihao Liu3Junkun Wang4Yuan Wan5Lina Zhao6Tingyin Ning7Zhen Li8Yingying Ren9Shandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Key Laboratory of Optics and Photonic Device & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaRandom lasers have attracted much attention in recent years owing to their advantages of a simple fabrication process, low processing cost, and material flexibility for any lasing wavelengths. They provide a roadmap for the design of ultra-bright lighting, displays, etc. However, the threshold reduction in random nanolasers remains a challenge in practical applications. In this work, lower-threshold random laser action from monolayer molybdenum disulfide film-encapsulated Au nanoparticles (MoS<sub>2</sub>/Au NPs) is demonstrated. The observed laser action of the MoS<sub>2</sub>/Au NPs shows a lower threshold of about 0.564 µJ/mm<sup>2</sup>, which is about 46.2% lower than the threshold of random lasers based on Au NPs. We proposed that the charge transfer between MoS<sub>2</sub> and the gain material is the main reason for the reduction in the random laser threshold. The finite-difference time-domain (FDTD) method was used to calculate the lasing action of these two nanostructures. When charge transfer is taken into account, the theoretically calculated threshold of the MoS<sub>2</sub>/Au NPs is reduced by 46.8% compared to Au NP samples, which is consistent with the experimental results. This study provides a new mechanism to achieve low-threshold and high-quality random lasers, which has the potential to facilitate the application of random lasers and the development of high-performance optoelectronic devices.https://www.mdpi.com/2304-6732/11/2/168random laserlow thresholdcharge transferMoS<sub>2</sub>Au NPs |
| spellingShingle | Yanyan Huo Ke Sun Yuqian Zhang Weihao Liu Junkun Wang Yuan Wan Lina Zhao Tingyin Ning Zhen Li Yingying Ren The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer Photonics random laser low threshold charge transfer MoS<sub>2</sub> Au NPs |
| title | The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer |
| title_full | The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer |
| title_fullStr | The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer |
| title_full_unstemmed | The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer |
| title_short | The Origin of Threshold Reduction in Random Lasers Based on MoS<sub>2</sub>/Au NPs: Charge Transfer |
| title_sort | origin of threshold reduction in random lasers based on mos sub 2 sub au nps charge transfer |
| topic | random laser low threshold charge transfer MoS<sub>2</sub> Au NPs |
| url | https://www.mdpi.com/2304-6732/11/2/168 |
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