Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
Abstract As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random acce...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-11-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300286 |
| _version_ | 1827766211724705792 |
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| author | Carlos Silva Jonas Deuermeier Weidong Zhang Emanuel Carlos Pedro Barquinha Rodrigo Martins Asal Kiazadeh |
| author_facet | Carlos Silva Jonas Deuermeier Weidong Zhang Emanuel Carlos Pedro Barquinha Rodrigo Martins Asal Kiazadeh |
| author_sort | Carlos Silva |
| collection | DOAJ |
| description | Abstract As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in‐memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco‐friendly zinc‐tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low‐cost, and critical‐raw‐material‐free composition. In this perspective article, the research progress on ZTO‐based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms. |
| first_indexed | 2024-03-11T11:39:29Z |
| format | Article |
| id | doaj.art-4ca555241e4548caa7b5314d1654cfe2 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T11:39:29Z |
| publishDate | 2023-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-4ca555241e4548caa7b5314d1654cfe22023-11-10T08:29:50ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-11-01911n/an/a10.1002/aelm.202300286Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge DevicesCarlos Silva0Jonas Deuermeier1Weidong Zhang2Emanuel Carlos3Pedro Barquinha4Rodrigo Martins5Asal Kiazadeh6CENIMAT|I3N, Department of Materials Science School of Science and Technology NOVA University Lisbon CEMOP/UNINOVA Caparica 2829‐516 PortugalCENIMAT|I3N, Department of Materials Science School of Science and Technology NOVA University Lisbon CEMOP/UNINOVA Caparica 2829‐516 PortugalSchool of Engineering Liverpool John Moores University Liverpool L1 0BA UKCENIMAT|I3N, Department of Materials Science School of Science and Technology NOVA University Lisbon CEMOP/UNINOVA Caparica 2829‐516 PortugalCENIMAT|I3N, Department of Materials Science School of Science and Technology NOVA University Lisbon CEMOP/UNINOVA Caparica 2829‐516 PortugalCENIMAT|I3N, Department of Materials Science School of Science and Technology NOVA University Lisbon CEMOP/UNINOVA Caparica 2829‐516 PortugalCENIMAT|I3N, Department of Materials Science School of Science and Technology NOVA University Lisbon CEMOP/UNINOVA Caparica 2829‐516 PortugalAbstract As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in‐memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco‐friendly zinc‐tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low‐cost, and critical‐raw‐material‐free composition. In this perspective article, the research progress on ZTO‐based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.https://doi.org/10.1002/aelm.202300286neuromorphicresistive switchingsustainableZTO |
| spellingShingle | Carlos Silva Jonas Deuermeier Weidong Zhang Emanuel Carlos Pedro Barquinha Rodrigo Martins Asal Kiazadeh Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices Advanced Electronic Materials neuromorphic resistive switching sustainable ZTO |
| title | Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices |
| title_full | Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices |
| title_fullStr | Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices |
| title_full_unstemmed | Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices |
| title_short | Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices |
| title_sort | perspective zinc tin oxide based memristors for sustainable and flexible in memory computing edge devices |
| topic | neuromorphic resistive switching sustainable ZTO |
| url | https://doi.org/10.1002/aelm.202300286 |
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