Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/4/508 |
| _version_ | 1827599844893523968 |
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| author | Inyoung Lee Hyojin Park Quan The Nguyen Garam Kim Seongjae Cho Ilhwan Cho |
| author_facet | Inyoung Lee Hyojin Park Quan The Nguyen Garam Kim Seongjae Cho Ilhwan Cho |
| author_sort | Inyoung Lee |
| collection | DOAJ |
| description | A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain. |
| first_indexed | 2024-03-09T04:23:49Z |
| format | Article |
| id | doaj.art-4ca802bc2b614e279974eb3c7e29de05 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T04:23:49Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-4ca802bc2b614e279974eb3c7e29de052023-12-03T13:43:35ZengMDPI AGMicromachines2072-666X2022-03-0113450810.3390/mi13040508Optimization of Feedback FET with Asymmetric Source Drain Doping ProfileInyoung Lee0Hyojin Park1Quan The Nguyen2Garam Kim3Seongjae Cho4Ilhwan Cho5Department of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, KoreaDepartment of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, KoreaDepartment of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, KoreaDepartment of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, KoreaDepartment of Electronic Engineering, Gachon University, Seongnam-si 13120, Gyeonggi-do, KoreaDepartment of Electronic Engineering, Myongji University, Yongin-si 17058, Gyeonggi-do, KoreaA feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.https://www.mdpi.com/2072-666X/13/4/508feedback field-effect transistor (FBFET)device optimizationon–off current ratiosubthreshold swingTCAD |
| spellingShingle | Inyoung Lee Hyojin Park Quan The Nguyen Garam Kim Seongjae Cho Ilhwan Cho Optimization of Feedback FET with Asymmetric Source Drain Doping Profile Micromachines feedback field-effect transistor (FBFET) device optimization on–off current ratio subthreshold swing TCAD |
| title | Optimization of Feedback FET with Asymmetric Source Drain Doping Profile |
| title_full | Optimization of Feedback FET with Asymmetric Source Drain Doping Profile |
| title_fullStr | Optimization of Feedback FET with Asymmetric Source Drain Doping Profile |
| title_full_unstemmed | Optimization of Feedback FET with Asymmetric Source Drain Doping Profile |
| title_short | Optimization of Feedback FET with Asymmetric Source Drain Doping Profile |
| title_sort | optimization of feedback fet with asymmetric source drain doping profile |
| topic | feedback field-effect transistor (FBFET) device optimization on–off current ratio subthreshold swing TCAD |
| url | https://www.mdpi.com/2072-666X/13/4/508 |
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