Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with...

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Bibliographic Details
Main Authors:	Inyoung Lee, Hyojin Park, Quan The Nguyen, Garam Kim, Seongjae Cho, Ilhwan Cho
Format:	Article
Language:	English
Published:	MDPI AG 2022-03-01
Series:	Micromachines
Subjects:	feedback field-effect transistor (FBFET) device optimization on–off current ratio subthreshold swing TCAD
Online Access:	https://www.mdpi.com/2072-666X/13/4/508

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