Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly. Most of the existing crosstalk suppression methods are...

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Bibliographic Details
Main Authors: Xiaoli Guo, Dian Wu, Lei Zhang, Xibo Yuan, Xinsong Zhang, Shugen Bai, Jian Zhong
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9931010/