Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications
The emulation of the biological synapses is essential for brain-inspired computing which is expected to overcome the traditional von Neumann bottleneck. Thus, synaptic memristor with analog resistive switching (RS) is highly desirable in non-volatile memristors for future neuromorphic computing. Her...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-10-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127523007827 |
| _version_ | 1797647881679667200 |
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| author | Wanxuan Xie Yang Zhong Dehui Wang Lun Zhong Lu Han Qiongfen Yang Wenjing Jie |
| author_facet | Wanxuan Xie Yang Zhong Dehui Wang Lun Zhong Lu Han Qiongfen Yang Wenjing Jie |
| author_sort | Wanxuan Xie |
| collection | DOAJ |
| description | The emulation of the biological synapses is essential for brain-inspired computing which is expected to overcome the traditional von Neumann bottleneck. Thus, synaptic memristor with analog resistive switching (RS) is highly desirable in non-volatile memristors for future neuromorphic computing. Herein, the co-existence of digital and analog RS can be observed in two-dimensional (2D) layered BiOI nanosheets sandwiched by the top and bottom Pt electrodes. The vertical Pt/BiOI/Pt memristors demonstrate typical bipolar RS behaviors with a large ON/OFF ratio of 1.0 × 103 and long retention time up to 1.6 × 104 s under a relatively large operation voltage. When the operation voltages are reduced to 1 V, analog RS behaviors with a series of tunable resistance states can be observed. The adjustable resistance states can be utilized to emulate “learning-forgetting” experience of human brain. Repeatable long-term potentiation (LTP) and long-term depression (LTD) cycles can be implemented based on the synaptic memristors, which can be used for simulation of artificial neural network for image recognition with accuracy up to 91.15 %. Moreover, Pavlov’s dog experiment is successfully emulated based on the synaptic memristors. This study suggests good prospects of the synaptic memristors based on BiOI nanosheets for future neuromorphic computing. |
| first_indexed | 2024-03-11T15:24:08Z |
| format | Article |
| id | doaj.art-4cc09ff93b5849da87dd53e89163988b |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-03-11T15:24:08Z |
| publishDate | 2023-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-4cc09ff93b5849da87dd53e89163988b2023-10-28T05:06:39ZengElsevierMaterials & Design0264-12752023-10-01234112367Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applicationsWanxuan Xie0Yang Zhong1Dehui Wang2Lun Zhong3Lu Han4Qiongfen Yang5Wenjing Jie6College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCollege of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCollege of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCollege of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCollege of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCorresponding authors.; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCorresponding authors.; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaThe emulation of the biological synapses is essential for brain-inspired computing which is expected to overcome the traditional von Neumann bottleneck. Thus, synaptic memristor with analog resistive switching (RS) is highly desirable in non-volatile memristors for future neuromorphic computing. Herein, the co-existence of digital and analog RS can be observed in two-dimensional (2D) layered BiOI nanosheets sandwiched by the top and bottom Pt electrodes. The vertical Pt/BiOI/Pt memristors demonstrate typical bipolar RS behaviors with a large ON/OFF ratio of 1.0 × 103 and long retention time up to 1.6 × 104 s under a relatively large operation voltage. When the operation voltages are reduced to 1 V, analog RS behaviors with a series of tunable resistance states can be observed. The adjustable resistance states can be utilized to emulate “learning-forgetting” experience of human brain. Repeatable long-term potentiation (LTP) and long-term depression (LTD) cycles can be implemented based on the synaptic memristors, which can be used for simulation of artificial neural network for image recognition with accuracy up to 91.15 %. Moreover, Pavlov’s dog experiment is successfully emulated based on the synaptic memristors. This study suggests good prospects of the synaptic memristors based on BiOI nanosheets for future neuromorphic computing.http://www.sciencedirect.com/science/article/pii/S0264127523007827Two-dimensional materialsBismuth oxyiodideMemristorsResistive switchingSynapses |
| spellingShingle | Wanxuan Xie Yang Zhong Dehui Wang Lun Zhong Lu Han Qiongfen Yang Wenjing Jie Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications Materials & Design Two-dimensional materials Bismuth oxyiodide Memristors Resistive switching Synapses |
| title | Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications |
| title_full | Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications |
| title_fullStr | Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications |
| title_full_unstemmed | Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications |
| title_short | Co-existence of digital and analog resistive switching in 2D layered BiOI nanosheets for synaptic applications |
| title_sort | co existence of digital and analog resistive switching in 2d layered bioi nanosheets for synaptic applications |
| topic | Two-dimensional materials Bismuth oxyiodide Memristors Resistive switching Synapses |
| url | http://www.sciencedirect.com/science/article/pii/S0264127523007827 |
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