Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application
Integration and miniaturization are the inevitable trends in the development of electronic devices. PZT and graphene are typical ferroelectric and carbon-based materials, respectively, which have been widely used in various fields. Achieving high-quality PZT/graphene heterogeneous integration and sy...
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| Format: | Article |
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MDPI AG
2024-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/5/432 |
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| author | Kaixi Bi Shuqi Han Jialiang Chen Xiaoxue Bi Xiangyu Yang Liya Niu Linyu Mei |
| author_facet | Kaixi Bi Shuqi Han Jialiang Chen Xiaoxue Bi Xiangyu Yang Liya Niu Linyu Mei |
| author_sort | Kaixi Bi |
| collection | DOAJ |
| description | Integration and miniaturization are the inevitable trends in the development of electronic devices. PZT and graphene are typical ferroelectric and carbon-based materials, respectively, which have been widely used in various fields. Achieving high-quality PZT/graphene heterogeneous integration and systematically studying its electrical properties is of great significance. In this work, we reported the characterization of a PZT film based on the sol–gel method. Additionally, the thickness of the PZT film was pushed to the limit size (~100 nm) by optimizing the process. The test results, including the remnant and leakage current, show that the PZT film is a reliable and suitable platform for further graphene-integrated applications. The non-destructive regulation of the electrical properties of graphene has been studied based on a domain-polarized substrate and strain-polarized substrate. The domain structures in the PZT film exhibit different geometric structures with ~0.3 V surface potential. The I–V output curves of graphene integrated on the surface of the PZT film exhibited obvious rectification characteristics because of p/n-doping tuned by an interfacial polarized electric field. In contrast, a ~100 nm thick PZT film makes it easy to acquire a larger strain gradient for flexural potential. The tested results also show a rectification phenomenon, which is similar to domain polarization substrate regulation. Considering the difficulty of measuring the flexural potential, the work might provide a new approach to assessing the flexural polarized regulation effect. A thinner ferroelectric film/graphene heterojunction and the polarized regulation of graphene will provide a platform for promoting low-dimension film-integrated applications. |
| first_indexed | 2024-04-25T00:23:11Z |
| format | Article |
| id | doaj.art-4ce543c54cf34ac0851e5095c7fbc09a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-04-25T00:23:11Z |
| publishDate | 2024-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-4ce543c54cf34ac0851e5095c7fbc09a2024-03-12T16:51:33ZengMDPI AGNanomaterials2079-49912024-02-0114543210.3390/nano14050432Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated ApplicationKaixi Bi0Shuqi Han1Jialiang Chen2Xiaoxue Bi3Xiangyu Yang4Liya Niu5Linyu Mei6School of Semiconductors and Physics, North University of China, Taiyuan 030051, ChinaKey Laboratory of National Defense Science and Technology on Electronic Measurement, North University of China, Taiyuan 030051, ChinaKey Laboratory of National Defense Science and Technology on Electronic Measurement, North University of China, Taiyuan 030051, ChinaKey Laboratory of National Defense Science and Technology on Electronic Measurement, North University of China, Taiyuan 030051, ChinaZhejiang Dali Technology Co., Ltd., Hangzhou 310053, ChinaKey Laboratory of National Defense Science and Technology on Electronic Measurement, North University of China, Taiyuan 030051, ChinaKey Laboratory of National Defense Science and Technology on Electronic Measurement, North University of China, Taiyuan 030051, ChinaIntegration and miniaturization are the inevitable trends in the development of electronic devices. PZT and graphene are typical ferroelectric and carbon-based materials, respectively, which have been widely used in various fields. Achieving high-quality PZT/graphene heterogeneous integration and systematically studying its electrical properties is of great significance. In this work, we reported the characterization of a PZT film based on the sol–gel method. Additionally, the thickness of the PZT film was pushed to the limit size (~100 nm) by optimizing the process. The test results, including the remnant and leakage current, show that the PZT film is a reliable and suitable platform for further graphene-integrated applications. The non-destructive regulation of the electrical properties of graphene has been studied based on a domain-polarized substrate and strain-polarized substrate. The domain structures in the PZT film exhibit different geometric structures with ~0.3 V surface potential. The I–V output curves of graphene integrated on the surface of the PZT film exhibited obvious rectification characteristics because of p/n-doping tuned by an interfacial polarized electric field. In contrast, a ~100 nm thick PZT film makes it easy to acquire a larger strain gradient for flexural potential. The tested results also show a rectification phenomenon, which is similar to domain polarization substrate regulation. Considering the difficulty of measuring the flexural potential, the work might provide a new approach to assessing the flexural polarized regulation effect. A thinner ferroelectric film/graphene heterojunction and the polarized regulation of graphene will provide a platform for promoting low-dimension film-integrated applications.https://www.mdpi.com/2079-4991/14/5/432grapheneferroelectric filmpolarized substraterectification |
| spellingShingle | Kaixi Bi Shuqi Han Jialiang Chen Xiaoxue Bi Xiangyu Yang Liya Niu Linyu Mei Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application Nanomaterials graphene ferroelectric film polarized substrate rectification |
| title | Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application |
| title_full | Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application |
| title_fullStr | Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application |
| title_full_unstemmed | Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application |
| title_short | Interfacial Polarization Control Engineering and Ferroelectric PZT/Graphene Heterostructure Integrated Application |
| title_sort | interfacial polarization control engineering and ferroelectric pzt graphene heterostructure integrated application |
| topic | graphene ferroelectric film polarized substrate rectification |
| url | https://www.mdpi.com/2079-4991/14/5/432 |
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