Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection
Empowered by an ultrawide bandgap (Eg = 4.5–4.9 eV), beta gallium oxide (β-Ga2O3) crystal is an ideal material for solar-blind ultraviolet (SBUV, λ < 280 nm) detection. Here, we report on the first demonstration of dual-modality SBUV light sensing integrated in the same device enabled by multi-ph...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5054625 |
| _version_ | 1819207715670458368 |
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| author | Xu-Qian Zheng Yong Xie Jaesung Lee Zhitai Jia Xutang Tao Philip X.-L. Feng |
| author_facet | Xu-Qian Zheng Yong Xie Jaesung Lee Zhitai Jia Xutang Tao Philip X.-L. Feng |
| author_sort | Xu-Qian Zheng |
| collection | DOAJ |
| description | Empowered by an ultrawide bandgap (Eg = 4.5–4.9 eV), beta gallium oxide (β-Ga2O3) crystal is an ideal material for solar-blind ultraviolet (SBUV, λ < 280 nm) detection. Here, we report on the first demonstration of dual-modality SBUV light sensing integrated in the same device enabled by multi-physics coupling across photo-electrical and photo-thermo-mechanical domains. The specially designed suspended β-Ga2O3 nanoelectromechanical systems (NEMS) transducer reveals dual-modality responses, with a photocurrent responsivity of 4 mA/W and a frequency shift responsivity of 250 Hz/nW, upon SBUV light exposure. An additional demonstration of a β-Ga2O3 photo-field-effect transistor exhibits a boosted responsivity of 63 A/W. Analysis on the device suggests that reducing the thickness and length of the transducer could further improve the SBUV light sensing responsivities for both modalities. The demonstration could pave the way for future realization of SBUV detectors with dual modalities for enhanced detection fidelity, or respectively optimized for different sensing scenarios. |
| first_indexed | 2024-12-23T05:27:54Z |
| format | Article |
| id | doaj.art-4d11672d260b438281918ad968203c4e |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-23T05:27:54Z |
| publishDate | 2019-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-4d11672d260b438281918ad968203c4e2022-12-21T17:58:32ZengAIP Publishing LLCAPL Materials2166-532X2019-02-0172022523022523-1010.1063/1.5054625024992APMBeta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detectionXu-Qian Zheng0Yong Xie1Jaesung Lee2Zhitai Jia3Xutang Tao4Philip X.-L. Feng5Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USADepartment of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USADepartment of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USAState Key Laboratory of Crystal Materials and Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan, Shandong 250100, ChinaState Key Laboratory of Crystal Materials and Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan, Shandong 250100, ChinaDepartment of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USAEmpowered by an ultrawide bandgap (Eg = 4.5–4.9 eV), beta gallium oxide (β-Ga2O3) crystal is an ideal material for solar-blind ultraviolet (SBUV, λ < 280 nm) detection. Here, we report on the first demonstration of dual-modality SBUV light sensing integrated in the same device enabled by multi-physics coupling across photo-electrical and photo-thermo-mechanical domains. The specially designed suspended β-Ga2O3 nanoelectromechanical systems (NEMS) transducer reveals dual-modality responses, with a photocurrent responsivity of 4 mA/W and a frequency shift responsivity of 250 Hz/nW, upon SBUV light exposure. An additional demonstration of a β-Ga2O3 photo-field-effect transistor exhibits a boosted responsivity of 63 A/W. Analysis on the device suggests that reducing the thickness and length of the transducer could further improve the SBUV light sensing responsivities for both modalities. The demonstration could pave the way for future realization of SBUV detectors with dual modalities for enhanced detection fidelity, or respectively optimized for different sensing scenarios.http://dx.doi.org/10.1063/1.5054625 |
| spellingShingle | Xu-Qian Zheng Yong Xie Jaesung Lee Zhitai Jia Xutang Tao Philip X.-L. Feng Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection APL Materials |
| title | Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection |
| title_full | Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection |
| title_fullStr | Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection |
| title_full_unstemmed | Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection |
| title_short | Beta gallium oxide (β-Ga2O3) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection |
| title_sort | beta gallium oxide β ga2o3 nanoelectromechanical transducer for dual modality solar blind ultraviolet light detection |
| url | http://dx.doi.org/10.1063/1.5054625 |
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