| Summary: | Abstract Metal‐semiconductor field‐effect transistor (MESFET) devices based on pulsed laser deposition (PLD) grown In2O3 thin films with on–off ratios exceeding 6 orders of magnitude and low sub‐threshold swing values close to the thermodynamic limit are reported. Oxygen plasma treatment and compensation doping with Mg are utilized to suppress the accumulation of electrons at the surface of In2O3, which is a major obstacle for its use as an active material in electronic devices. The influence of both methods is investigated on the electrical properties of thin films as determined by Hall effect measurements on samples of varying film thickness. Using the performance of vertical Schottky barrier diodes as a benchmark, fundamental plasma parameters such as input power and background gas pressure are optimized.
|
|---|