Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices
Abstract Metal‐semiconductor field‐effect transistor (MESFET) devices based on pulsed laser deposition (PLD) grown In2O3 thin films with on–off ratios exceeding 6 orders of magnitude and low sub‐threshold swing values close to the thermodynamic limit are reported. Oxygen plasma treatment and compens...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-11-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300291 |