Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator
<p>Abstract</p> <p>In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and lengt...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2008-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-008-9184-7 |
| _version_ | 1797728407493017600 |
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| author | Wong Vincent Sim YK Chua SJ Ngo CY Yoon SF Loke WK Cao Q Lim DR |
| author_facet | Wong Vincent Sim YK Chua SJ Ngo CY Yoon SF Loke WK Cao Q Lim DR |
| author_sort | Wong Vincent |
| collection | DOAJ |
| description | <p>Abstract</p> <p>In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm) and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV/cm. Investigation at wavelength range of 1,300–1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts.</p> |
| first_indexed | 2024-03-12T11:13:27Z |
| format | Article |
| id | doaj.art-4d408446acea4f2fb80a55b66b3bd629 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T11:13:27Z |
| publishDate | 2008-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-4d408446acea4f2fb80a55b66b3bd6292023-09-02T02:25:45ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2008-01-01312486490Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption ModulatorWong VincentSim YKChua SJNgo CYYoon SFLoke WKCao QLim DR<p>Abstract</p> <p>In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm) and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV/cm. Investigation at wavelength range of 1,300–1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts.</p>http://dx.doi.org/10.1007/s11671-008-9184-7InAs quantum dotsElectroabsorption modulatorRidge waveguide structurePhotocurrentOptical transmission |
| spellingShingle | Wong Vincent Sim YK Chua SJ Ngo CY Yoon SF Loke WK Cao Q Lim DR Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator Nanoscale Research Letters InAs quantum dots Electroabsorption modulator Ridge waveguide structure Photocurrent Optical transmission |
| title | Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator |
| title_full | Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator |
| title_fullStr | Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator |
| title_full_unstemmed | Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator |
| title_short | Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator |
| title_sort | investigation of semiconductor quantum dots for waveguide electroabsorption modulator |
| topic | InAs quantum dots Electroabsorption modulator Ridge waveguide structure Photocurrent Optical transmission |
| url | http://dx.doi.org/10.1007/s11671-008-9184-7 |
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