Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

<p>Abstract</p> <p>In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 &#956;m, width of 10 &#956;m, and lengt...

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Bibliographic Details
Main Authors: Wong Vincent, Sim YK, Chua SJ, Ngo CY, Yoon SF, Loke WK, Cao Q, Lim DR
Format: Article
Language:English
Published: SpringerOpen 2008-01-01
Series:Nanoscale Research Letters
Subjects:
InAs quantum dots
Electroabsorption modulator
Ridge waveguide structure
Photocurrent
Optical transmission
Online Access:http://dx.doi.org/10.1007/s11671-008-9184-7

Internet

http://dx.doi.org/10.1007/s11671-008-9184-7

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