Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enabl...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8706538/ |
| Summary: | A multi-level memory circuit with only amorphous oxide thin-film transistors (Ox-TFTs) is proposed. The proposed circuit comprises two Ox-TFTs and a capacitor. The proposed multi-level memory can modulate threshold voltage freely depending on programming voltages. Low leakage current of Ox-TFT enables the proposed circuit to operate as a memory. We measured transfer characteristics of the proposed circuit and investigated the threshold voltage shift by a simple capacitance model. We found that the proposed memory cell can be used as a multi-level memory. |
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| ISSN: | 2168-6734 |