Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition

Monolayer molybdenum disulfide (MoS _2 ) is a promising candidate for inclusion in optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel photoluminescence (PL). Chemical vapour deposition (CVD) is an important method for the preparation of large-area films of mono...

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Main Authors: Brendan F M Healy, Sophie L Pain, James Lloyd-Hughes, Nicholas E Grant, John D Murphy
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ad18ef
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author Brendan F M Healy
Sophie L Pain
James Lloyd-Hughes
Nicholas E Grant
John D Murphy
author_facet Brendan F M Healy
Sophie L Pain
James Lloyd-Hughes
Nicholas E Grant
John D Murphy
author_sort Brendan F M Healy
collection DOAJ
description Monolayer molybdenum disulfide (MoS _2 ) is a promising candidate for inclusion in optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel photoluminescence (PL). Chemical vapour deposition (CVD) is an important method for the preparation of large-area films of monolayer MoS _2 . The PL character of as-prepared monolayer MoS _2 must be well understood to facilitate detailed evaluation of any process-induced effects during device fabrication. We comparatively explore the PL emission from four different commercially available CVD-grown MoS _2 monolayer films. We characterize the samples via Raman and PL spectroscopy, using both single-spot and mapping techniques, while atomic force microscopy (AFM) is applied to map the surface structure. Via multipeak fitting, we decompose the PL spectra into constituent exciton and trion contributions, enabling an assessment of the quality of the MoS _2 monolayers. We find that the PL character varies significantly from sample to sample. We also reveal substantial inhomogeneity of the PL signal across each individual MoS _2 film. We attribute the PL variation to non-uniform MoS _2 film morphologies that result from the nucleation and coalescence processes during the CVD film development. Understanding the large variability in starting PL behaviour is vital to optimize the optoelectronic properties for MoS _2 -based devices.
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spelling doaj.art-4d7a690ef15b4cc2b072b91da1a0ce982024-01-09T11:40:22ZengIOP PublishingMaterials Research Express2053-15912024-01-0111101500210.1088/2053-1591/ad18efQuantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour depositionBrendan F M Healy0https://orcid.org/0009-0000-8475-4851Sophie L Pain1https://orcid.org/0000-0003-1333-2023James Lloyd-Hughes2https://orcid.org/0000-0002-9680-0138Nicholas E Grant3https://orcid.org/0000-0002-3943-838XJohn D Murphy4https://orcid.org/0000-0003-0993-5972School of Engineering, University of Warwick , Coventry, CV4 7AL, United KingdomSchool of Engineering, University of Warwick , Coventry, CV4 7AL, United KingdomDepartment of Physics, University of Warwick , Coventry, CV4 7AL, United KingdomSchool of Engineering, University of Warwick , Coventry, CV4 7AL, United KingdomSchool of Engineering, University of Warwick , Coventry, CV4 7AL, United KingdomMonolayer molybdenum disulfide (MoS _2 ) is a promising candidate for inclusion in optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel photoluminescence (PL). Chemical vapour deposition (CVD) is an important method for the preparation of large-area films of monolayer MoS _2 . The PL character of as-prepared monolayer MoS _2 must be well understood to facilitate detailed evaluation of any process-induced effects during device fabrication. We comparatively explore the PL emission from four different commercially available CVD-grown MoS _2 monolayer films. We characterize the samples via Raman and PL spectroscopy, using both single-spot and mapping techniques, while atomic force microscopy (AFM) is applied to map the surface structure. Via multipeak fitting, we decompose the PL spectra into constituent exciton and trion contributions, enabling an assessment of the quality of the MoS _2 monolayers. We find that the PL character varies significantly from sample to sample. We also reveal substantial inhomogeneity of the PL signal across each individual MoS _2 film. We attribute the PL variation to non-uniform MoS _2 film morphologies that result from the nucleation and coalescence processes during the CVD film development. Understanding the large variability in starting PL behaviour is vital to optimize the optoelectronic properties for MoS _2 -based devices.https://doi.org/10.1088/2053-1591/ad18efmonolayer MoS22D materialstransition metal dichalcogenidesmonolayer filmsphotoluminescence
spellingShingle Brendan F M Healy
Sophie L Pain
James Lloyd-Hughes
Nicholas E Grant
John D Murphy
Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
Materials Research Express
monolayer MoS2
2D materials
transition metal dichalcogenides
monolayer films
photoluminescence
title Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
title_full Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
title_fullStr Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
title_full_unstemmed Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
title_short Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
title_sort quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
topic monolayer MoS2
2D materials
transition metal dichalcogenides
monolayer films
photoluminescence
url https://doi.org/10.1088/2053-1591/ad18ef
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