Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices
Abstract Both all‐inorganic lead‐free perovskite and CdS nanobelts possess outstanding photo‐detective properties. Herein, a hybrid photodetector based on four CdS nanobelts (NBs)/Cs3Sb2Br9 nanoflake (NF) heterojunction fabricated by a dry‐transfer tactic is designed. In this structure, four paralle...
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Wiley-VCH
2024-01-01
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Online Access: | https://doi.org/10.1002/aelm.202300383 |
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author | Huohuo Chen Qianjin Wang Qiuhong Tan Hui Zhang Lei Liu Yingkai Liu |
author_facet | Huohuo Chen Qianjin Wang Qiuhong Tan Hui Zhang Lei Liu Yingkai Liu |
author_sort | Huohuo Chen |
collection | DOAJ |
description | Abstract Both all‐inorganic lead‐free perovskite and CdS nanobelts possess outstanding photo‐detective properties. Herein, a hybrid photodetector based on four CdS nanobelts (NBs)/Cs3Sb2Br9 nanoflake (NF) heterojunction fabricated by a dry‐transfer tactic is designed. In this structure, four parallel CdS nanobelts almost fully cover the Cs3Sb2Br9 NF so that their photoelectronic advantage is demonstrated. The Cs3Sb2Br9 is exploited as an efficient light absorber and component for the construction of type‐II energy band with CdS. Compared with a single CdS NB/Cs3Sb2Br9 NF device, the hybrid four CdS NBs/Cs3Sb2Br9 NF device increases the hybrid area ratio of the channel from 36% to 86%, and demonstrates an appealing performance on an ultrahigh ON/OFF current ratio of 1.54 × 105, remarkable responsivity of 4.13 × 103 A W−1, large detectivity of 1.47 × 1015 Jones, and tremendous external quantum efficiency of 1.14 × 106 %, which are 9.5, 3.8, 7.2, and 3.8 times greater than the single CdS NB/Cs3Sb2Br9 NF device, respectively. Moreover, the photoresponse wavelength of the hybrid four CdS NBs/Cs3Sb2Br9 NF device is broadened to 400–520 nm. This work offers a strategy to enhance the photoelectric performance of hybrid devices, along with the illustration of vital insight into advanced device designs for violet‐green photodetectors. |
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spelling | doaj.art-4ddfc49368e54f2f80f11937dd42ecb82024-01-10T06:50:59ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-01-01101n/an/a10.1002/aelm.202300383Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic DevicesHuohuo Chen0Qianjin Wang1Qiuhong Tan2Hui Zhang3Lei Liu4Yingkai Liu5Yunnan Key Laboratory of Opto‐electronic Information Technology College of Physics and Electronic Information Yunnan Normal University Kunming 650500 P. R. ChinaYunnan Key Laboratory of Opto‐electronic Information Technology College of Physics and Electronic Information Yunnan Normal University Kunming 650500 P. R. ChinaYunnan Key Laboratory of Opto‐electronic Information Technology College of Physics and Electronic Information Yunnan Normal University Kunming 650500 P. R. ChinaYunnan Key Laboratory of Opto‐electronic Information Technology College of Physics and Electronic Information Yunnan Normal University Kunming 650500 P. R. ChinaYunnan Key Laboratory of Opto‐electronic Information Technology College of Physics and Electronic Information Yunnan Normal University Kunming 650500 P. R. ChinaYunnan Key Laboratory of Opto‐electronic Information Technology College of Physics and Electronic Information Yunnan Normal University Kunming 650500 P. R. ChinaAbstract Both all‐inorganic lead‐free perovskite and CdS nanobelts possess outstanding photo‐detective properties. Herein, a hybrid photodetector based on four CdS nanobelts (NBs)/Cs3Sb2Br9 nanoflake (NF) heterojunction fabricated by a dry‐transfer tactic is designed. In this structure, four parallel CdS nanobelts almost fully cover the Cs3Sb2Br9 NF so that their photoelectronic advantage is demonstrated. The Cs3Sb2Br9 is exploited as an efficient light absorber and component for the construction of type‐II energy band with CdS. Compared with a single CdS NB/Cs3Sb2Br9 NF device, the hybrid four CdS NBs/Cs3Sb2Br9 NF device increases the hybrid area ratio of the channel from 36% to 86%, and demonstrates an appealing performance on an ultrahigh ON/OFF current ratio of 1.54 × 105, remarkable responsivity of 4.13 × 103 A W−1, large detectivity of 1.47 × 1015 Jones, and tremendous external quantum efficiency of 1.14 × 106 %, which are 9.5, 3.8, 7.2, and 3.8 times greater than the single CdS NB/Cs3Sb2Br9 NF device, respectively. Moreover, the photoresponse wavelength of the hybrid four CdS NBs/Cs3Sb2Br9 NF device is broadened to 400–520 nm. This work offers a strategy to enhance the photoelectric performance of hybrid devices, along with the illustration of vital insight into advanced device designs for violet‐green photodetectors.https://doi.org/10.1002/aelm.202300383CdS nanobeltsCs3Sb2Br9 nanoflakesdry‐transfer tacticsheterojunction devicesphotoelectric properties |
spellingShingle | Huohuo Chen Qianjin Wang Qiuhong Tan Hui Zhang Lei Liu Yingkai Liu Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices Advanced Electronic Materials CdS nanobelts Cs3Sb2Br9 nanoflakes dry‐transfer tactics heterojunction devices photoelectric properties |
title | Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices |
title_full | Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices |
title_fullStr | Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices |
title_full_unstemmed | Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices |
title_short | Hybrid Polyrhizal CdS Nanobelts/All‐Inorganic Perovskite Nanoflake Heterojunction toward Ultrahigh‐Performance Optoelectronic Devices |
title_sort | hybrid polyrhizal cds nanobelts all inorganic perovskite nanoflake heterojunction toward ultrahigh performance optoelectronic devices |
topic | CdS nanobelts Cs3Sb2Br9 nanoflakes dry‐transfer tactics heterojunction devices photoelectric properties |
url | https://doi.org/10.1002/aelm.202300383 |
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