Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%
Abstract Photodiodes are fundamental components in modern optoelectronics. Heterojunction photodiodes, simply configured by two different contact materials, have been a hot research topic for many years. Currently reported self‐biased heterojunction photodiodes routinely have external quantum effici...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-11-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202203234 |
| _version_ | 1811304657971052544 |
|---|---|
| author | Yibo Zhang Joel Y. Y. Loh Nazir P. Kherani |
| author_facet | Yibo Zhang Joel Y. Y. Loh Nazir P. Kherani |
| author_sort | Yibo Zhang |
| collection | DOAJ |
| description | Abstract Photodiodes are fundamental components in modern optoelectronics. Heterojunction photodiodes, simply configured by two different contact materials, have been a hot research topic for many years. Currently reported self‐biased heterojunction photodiodes routinely have external quantum efficiency (EQE) significantly below 100% due to optical and electrical losses. Herein, an approach that virtually overcomes this 100% EQE challenge via low‐aspect‐ratio nanostructures and drift‐dominated photocarrier transport in a heterojunction photodiode is proposed. Broadband near‐ideal EQE is achieved in nanocrystal indium tin oxide/black silicon (nc‐ITO/b‐Si) Schottky photodiodes. The b‐Si comprises nanostalagmites which balance the antireflection effect and surface morphology. The built‐in electric field is explored to match the optical generation profile, realizing enhanced photocarrier transport over a broadband of photogeneration. The devices exhibit unprecedented EQE among the reported leading‐edge heterojunction photodiodes: average EQE surpasses ≈98% for wavelengths of 570–925 nm, while overall EQE is greater than ≈95% from 500 to 960 nm. Further, only elementary fabrication techniques are explored to achieve these excellent device properties. A heart rate sensor driven by nanowatt faint light is demonstrated, indicating the enormous potential of this near‐ideal b‐Si photodiode for low power consuming applications. |
| first_indexed | 2024-04-13T08:11:10Z |
| format | Article |
| id | doaj.art-4df0016e4ad140e7ba95d3e6895f3b7f |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-13T08:11:10Z |
| publishDate | 2022-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-4df0016e4ad140e7ba95d3e6895f3b7f2022-12-22T02:54:57ZengWileyAdvanced Science2198-38442022-11-01933n/an/a10.1002/advs.202203234Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%Yibo Zhang0Joel Y. Y. Loh1Nazir P. Kherani2The Edward S. Rogers Sr. Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 CanadaThe Edward S. Rogers Sr. Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 CanadaThe Edward S. Rogers Sr. Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 CanadaAbstract Photodiodes are fundamental components in modern optoelectronics. Heterojunction photodiodes, simply configured by two different contact materials, have been a hot research topic for many years. Currently reported self‐biased heterojunction photodiodes routinely have external quantum efficiency (EQE) significantly below 100% due to optical and electrical losses. Herein, an approach that virtually overcomes this 100% EQE challenge via low‐aspect‐ratio nanostructures and drift‐dominated photocarrier transport in a heterojunction photodiode is proposed. Broadband near‐ideal EQE is achieved in nanocrystal indium tin oxide/black silicon (nc‐ITO/b‐Si) Schottky photodiodes. The b‐Si comprises nanostalagmites which balance the antireflection effect and surface morphology. The built‐in electric field is explored to match the optical generation profile, realizing enhanced photocarrier transport over a broadband of photogeneration. The devices exhibit unprecedented EQE among the reported leading‐edge heterojunction photodiodes: average EQE surpasses ≈98% for wavelengths of 570–925 nm, while overall EQE is greater than ≈95% from 500 to 960 nm. Further, only elementary fabrication techniques are explored to achieve these excellent device properties. A heart rate sensor driven by nanowatt faint light is demonstrated, indicating the enormous potential of this near‐ideal b‐Si photodiode for low power consuming applications.https://doi.org/10.1002/advs.202203234heterojunction photodiodenanostructured black siliconquantum efficiencyself‐biased photodetectionspace charge effect |
| spellingShingle | Yibo Zhang Joel Y. Y. Loh Nazir P. Kherani Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% Advanced Science heterojunction photodiode nanostructured black silicon quantum efficiency self‐biased photodetection space charge effect |
| title | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% |
| title_full | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% |
| title_fullStr | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% |
| title_full_unstemmed | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% |
| title_short | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% |
| title_sort | facilely achieved self biased black silicon heterojunction photodiode with broadband quantum efficiency approaching 100 |
| topic | heterojunction photodiode nanostructured black silicon quantum efficiency self‐biased photodetection space charge effect |
| url | https://doi.org/10.1002/advs.202203234 |
| work_keys_str_mv | AT yibozhang facilelyachievedselfbiasedblacksiliconheterojunctionphotodiodewithbroadbandquantumefficiencyapproaching100 AT joelyyloh facilelyachievedselfbiasedblacksiliconheterojunctionphotodiodewithbroadbandquantumefficiencyapproaching100 AT nazirpkherani facilelyachievedselfbiasedblacksiliconheterojunctionphotodiodewithbroadbandquantumefficiencyapproaching100 |