Si doping superlattice structure on 6H-SiC(0001)
Si-DSL structures multilayers are prepared on 6H-SiC(0001) successfully. The energy offsets of the n-Si/n-6H-SiC heterojunction in the conduction band and valance band are 0.21eV and 1.65eV, respectively. TEM characterizations of the p/n-Si DSL confirms the epitaxial growth of the Si films with [1-1...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201713008004 |