Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection
In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors. The model focuses on detecting biomolecules such as ChOx, protein, streptavidin and uricase by modulating the dielectric c...
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| Format: | Article |
| Language: | English |
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V.N. Karazin Kharkiv National University Publishing
2025-03-01
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| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/24499 |
| _version_ | 1826552982627418112 |
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| author | Abdellah Bouguenna Abdelhadi Feddag Driss Bouguenna Ibrahim Farouk Bouguenna |
| author_facet | Abdellah Bouguenna Abdelhadi Feddag Driss Bouguenna Ibrahim Farouk Bouguenna |
| author_sort | Abdellah Bouguenna |
| collection | DOAJ |
| description | In this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors. The model focuses on detecting biomolecules such as ChOx, protein, streptavidin and uricase by modulating the dielectric constant. The sensitivity parameters used for biomolecule detection include drain current, transconductance, and drain off sensitivity. The dielectric constant is adjusted based on the specific biomolecule being sensed by the biosensor. The variation in dielectric leads to changes in drain current, with an increase or decrease depending on the positive charge of the biomolecules. The HEMT device exhibits greater variations in drain current, transconductance, and drain off sensitivity compared to the MOSHEMT device when the biomolecule is present in the cavity region. The simulation results are validated by comparing them with Atlas-TCAD (atlas-technology computer aided design) and experimental data, showing excellent agreement. |
| first_indexed | 2025-03-14T07:17:47Z |
| format | Article |
| id | doaj.art-4e3923a9bf4445bbbefc25071363d11f |
| institution | Directory Open Access Journal |
| issn | 2312-4334 2312-4539 |
| language | English |
| last_indexed | 2025-03-14T07:17:47Z |
| publishDate | 2025-03-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj.art-4e3923a9bf4445bbbefc25071363d11f2025-03-03T17:28:40ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392025-03-01128428910.26565/2312-4334-2025-1-3324499Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules DetectionAbdellah Bouguenna0Abdelhadi Feddag1Driss Bouguenna2Ibrahim Farouk Bouguenna3Electrical Engineering Laboratory of Oran, Electronics Department, Electrical Engineering Faculty, Sciences & Technology University of Oran (MB-USTO), Oran, AlgeriaDepartment of Electronics. Faculty of Electrical Engineering University of Sciences and Technology of Oran, Microsystems and Embedded Systems Laboratory of Oran, AlgeriaGeomatics, Ecology and Environment Laboratory, Nature and Life Science Faculty, Mustapha Stambouli University of Mascara, Mascara, Algeria; Common Core Science and Technology Department, Sciences and Technology Faculty, Mustapha Stambouli University of Mascara, Mascara, AlgeriaElectrical Engineering Department, Sciences and Technology Faculty, Mustapha Stambouli University of Mascara, Mascara, AlgeriaIn this study, a model has been developed to analyze AlGaN/GaN high-electron-transistor (HEMT) and metal-oxide semiconductor high-electron-transistor (MOSHEMT) based biosensors. The model focuses on detecting biomolecules such as ChOx, protein, streptavidin and uricase by modulating the dielectric constant. The sensitivity parameters used for biomolecule detection include drain current, transconductance, and drain off sensitivity. The dielectric constant is adjusted based on the specific biomolecule being sensed by the biosensor. The variation in dielectric leads to changes in drain current, with an increase or decrease depending on the positive charge of the biomolecules. The HEMT device exhibits greater variations in drain current, transconductance, and drain off sensitivity compared to the MOSHEMT device when the biomolecule is present in the cavity region. The simulation results are validated by comparing them with Atlas-TCAD (atlas-technology computer aided design) and experimental data, showing excellent agreement.https://periodicals.karazin.ua/eejp/article/view/24499algan/ganhemtmoshemtbiosensorsbiomolecules |
| spellingShingle | Abdellah Bouguenna Abdelhadi Feddag Driss Bouguenna Ibrahim Farouk Bouguenna Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection East European Journal of Physics algan/gan hemt moshemt biosensors biomolecules |
| title | Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection |
| title_full | Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection |
| title_fullStr | Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection |
| title_full_unstemmed | Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection |
| title_short | Comparative Study and Analytical Modeling of AlGaN/GaN HEMT and MOSHEMT Based Biosensors for Biomolecules Detection |
| title_sort | comparative study and analytical modeling of algan gan hemt and moshemt based biosensors for biomolecules detection |
| topic | algan/gan hemt moshemt biosensors biomolecules |
| url | https://periodicals.karazin.ua/eejp/article/view/24499 |
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