Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)
This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/21/11279 |
| _version_ | 1827647283132366848 |
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| author | Haoji Wan Xianyun Liu Xin Su Xincheng Ren Shengting Luo Qi Zhou |
| author_facet | Haoji Wan Xianyun Liu Xin Su Xincheng Ren Shengting Luo Qi Zhou |
| author_sort | Haoji Wan |
| collection | DOAJ |
| description | This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various gates, multiple working modes are obtained. Compared with traditional FinFETs, the multi-enhanced operation gate fin field-effect transistor in this study combines independent gates by connecting the selection modes; thus, a possible operation can be performed to attain a FinFET with five equivalent working states in only one device. This novel function can enable the device to work with multiple specific voltages and currents by connecting the corresponding gate combinations, augmenting the integrated degrees and shifting the working modes, thereby meeting the different needs of high-speed, low-power, and other potential applications. Further, the potential applications are highlighted. |
| first_indexed | 2024-03-09T19:17:00Z |
| format | Article |
| id | doaj.art-4e4d72994a754ab5a2b3eeece142e985 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T19:17:00Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-4e4d72994a754ab5a2b3eeece142e9852023-11-24T03:40:58ZengMDPI AGApplied Sciences2076-34172022-11-0112211127910.3390/app122111279Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)Haoji Wan0Xianyun Liu1Xin Su2Xincheng Ren3Shengting Luo4Qi Zhou5School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, ChinaSchool of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, ChinaSchool of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, ChinaSchool of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, ChinaSchool of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, ChinaSchool of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, ChinaThis study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various gates, multiple working modes are obtained. Compared with traditional FinFETs, the multi-enhanced operation gate fin field-effect transistor in this study combines independent gates by connecting the selection modes; thus, a possible operation can be performed to attain a FinFET with five equivalent working states in only one device. This novel function can enable the device to work with multiple specific voltages and currents by connecting the corresponding gate combinations, augmenting the integrated degrees and shifting the working modes, thereby meeting the different needs of high-speed, low-power, and other potential applications. Further, the potential applications are highlighted.https://www.mdpi.com/2076-3417/12/21/11279multi-enhanced operation gate fin field-effect transistor (MEOG FinFET)silicon-on-insulator (SOI)operation in various statesindependent gates |
| spellingShingle | Haoji Wan Xianyun Liu Xin Su Xincheng Ren Shengting Luo Qi Zhou Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET) Applied Sciences multi-enhanced operation gate fin field-effect transistor (MEOG FinFET) silicon-on-insulator (SOI) operation in various states independent gates |
| title | Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET) |
| title_full | Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET) |
| title_fullStr | Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET) |
| title_full_unstemmed | Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET) |
| title_short | Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET) |
| title_sort | characteristics of a novel finfet with multi enhanced operation gates meog finfet |
| topic | multi-enhanced operation gate fin field-effect transistor (MEOG FinFET) silicon-on-insulator (SOI) operation in various states independent gates |
| url | https://www.mdpi.com/2076-3417/12/21/11279 |
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