Intensive γ-ray light sources based on oriented single crystals
The feasibility of gamma-ray light sources based on the channeling phenomenon of ultrarelativistic electrons and positrons in oriented single crystals is demonstrated using rigorous numerical modeling. Case studies are presented for 10 GeV and sub-GeV e^{-}/e^{+} beams incident on 10^{-1}-10^{0} mm...
Những tác giả chính: | Gennady B. Sushko, Andrei V. Korol, Andrey V. Solov’yov |
---|---|
Định dạng: | Bài viết |
Ngôn ngữ: | English |
Được phát hành: |
American Physical Society
2024-10-01
|
Loạt: | Physical Review Accelerators and Beams |
Truy cập trực tuyến: | http://doi.org/10.1103/PhysRevAccelBeams.27.100703 |
Những quyển sách tương tự
-
Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals
Bằng: Haurylavets Viktar, et al.
Được phát hành: (2023-03-01) -
Generalized correction to embedded-atom potentials for modeling equilibrium and non-equilibrium properties of metals
Bằng: Verkhovtsev Alexey, et al.
Được phát hành: (2020-09-01) -
Radiation of 375 MeV electrons and positrons during channeling in straight and periodically bent diamond crystals
Bằng: Pavlov Alexander, et al.
Được phát hành: (2019-12-01) -
Science vs. technology in radiation therapy from X-rays to ions
Bằng: Eugene Surdutovich, et al.
Được phát hành: (2019-10-01) -
Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF3)4
Bằng: Alexey Prosvetov, et al.
Được phát hành: (2021-10-01)