Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Power consumption and I<sub>on</sub>/I<sub>off</sub> ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capac...

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Main Authors: Carlos Couso, Javier Martin-Martinez, Marc Porti, Montserrat Nafria
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8102997/
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author Carlos Couso
Javier Martin-Martinez
Marc Porti
Montserrat Nafria
author_facet Carlos Couso
Javier Martin-Martinez
Marc Porti
Montserrat Nafria
author_sort Carlos Couso
collection DOAJ
description Power consumption and I<sub>on</sub>/I<sub>off</sub> ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V<sub>OP</sub>) has been proposed, which provides a good trade-off between the I<sub>on</sub>/I<sub>off</sub> ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.
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spelling doaj.art-4e78f865fc984c76896d2761118b0be12022-12-21T19:55:15ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-016556210.1109/JEDS.2017.27686588102997Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT ApplicationsCarlos Couso0https://orcid.org/0000-0003-4757-2439Javier Martin-Martinez1Marc Porti2Montserrat Nafria3Electronic Engineering Department, Universitat Aut&#x00F2;noma de Barcelona, Barcelona, SpainElectronic Engineering Department, Universitat Aut&#x00F2;noma de Barcelona, Barcelona, SpainElectronic Engineering Department, Universitat Aut&#x00F2;noma de Barcelona, Barcelona, SpainElectronic Engineering Department, Universitat Aut&#x00F2;noma de Barcelona, Barcelona, SpainPower consumption and I<sub>on</sub>/I<sub>off</sub> ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V<sub>OP</sub>) has been proposed, which provides a good trade-off between the I<sub>on</sub>/I<sub>off</sub> ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.https://ieeexplore.ieee.org/document/8102997/Near-threshold voltagepower consumptionCMOS inverterTCADIoTUTBB FDSOI
spellingShingle Carlos Couso
Javier Martin-Martinez
Marc Porti
Montserrat Nafria
Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
IEEE Journal of the Electron Devices Society
Near-threshold voltage
power consumption
CMOS inverter
TCAD
IoT
UTBB FDSOI
title Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
title_full Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
title_fullStr Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
title_full_unstemmed Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
title_short Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications
title_sort performance and power consumption trade off in utbb fdsoi inverters operated at ntv for iot applications
topic Near-threshold voltage
power consumption
CMOS inverter
TCAD
IoT
UTBB FDSOI
url https://ieeexplore.ieee.org/document/8102997/
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