Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices
On glass substrates in a basic medium, Zn(1-x)SCux nanostructures were produced using a chemical bath approach for an adjusted dopant concentration (DC) (0.01–0.05 M) at 80 °C, and annealed at 300 °C for 2.5 h. The X-ray diffraction pattern revealed a α-ZnS phase in the produced films with a stronge...
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Elsevier
2023-12-01
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Series: | Results in Optics |
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author | Augustine A. McAsule Ngutor S. Akiiga Joshua S. Ikwe Newton F. Gesa Michael O. Awoji Victor W. Zhiya Peverga R. Jubu Terwase M. Aper Jonathan T. Ikyumbur Terver Daniel |
author_facet | Augustine A. McAsule Ngutor S. Akiiga Joshua S. Ikwe Newton F. Gesa Michael O. Awoji Victor W. Zhiya Peverga R. Jubu Terwase M. Aper Jonathan T. Ikyumbur Terver Daniel |
author_sort | Augustine A. McAsule |
collection | DOAJ |
description | On glass substrates in a basic medium, Zn(1-x)SCux nanostructures were produced using a chemical bath approach for an adjusted dopant concentration (DC) (0.01–0.05 M) at 80 °C, and annealed at 300 °C for 2.5 h. The X-ray diffraction pattern revealed a α-ZnS phase in the produced films with a stronger diffraction peak at 31.775°. The creation of a high crystalline structure in the α-ZnS phase is confirmed by Raman spectral analysis. SEM images revealed a uniform and dense surface morphology with modest grain size sharing and no fractures. The existence of anticipated Zn, S, and Cu was detected by energy-dispersive X-ray spectroscopy. Spectrophotometry in the UV–visible range showed a redshift. Additionally, as DC is increased, the optical band gaps (3.82–3.99 eV) and transmittance were observed to increased. The projected crystallite sizes (3.58–2.45 nm) based on energy band gaps shrank as DC increased. Infrared spectroscopy using the Fourier transform did not reveal any contaminant signals. The electrical conductivity was p-type, according to the Hall Effect investigation. |
first_indexed | 2024-03-09T03:08:56Z |
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id | doaj.art-4f0bf6e30b91439d9b8deaa7e3abb38c |
institution | Directory Open Access Journal |
issn | 2666-9501 |
language | English |
last_indexed | 2024-03-09T03:08:56Z |
publishDate | 2023-12-01 |
publisher | Elsevier |
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series | Results in Optics |
spelling | doaj.art-4f0bf6e30b91439d9b8deaa7e3abb38c2023-12-04T05:24:30ZengElsevierResults in Optics2666-95012023-12-0113100505Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devicesAugustine A. McAsule0Ngutor S. Akiiga1Joshua S. Ikwe2Newton F. Gesa3Michael O. Awoji4Victor W. Zhiya5Peverga R. Jubu6Terwase M. Aper7Jonathan T. Ikyumbur8Terver Daniel9Department of Physics, Joseph Sarwuam Tarka University, Makurdi 970101, Nigeria; Corresponding author.Department of Physics, Joseph Sarwuam Tarka University, Makurdi 970101, Nigeria; Institute of Basic and Applied Sciences, Egypt-Japan University of Science and Technology, New Borg El Arab, Alexandria 21934, EgyptDepartment of Physics, Joseph Sarwuam Tarka University, Makurdi 970101, NigeriaDepartment of Physics, Joseph Sarwuam Tarka University, Makurdi 970101, NigeriaDepartment of Physics, Kwararafa University, Wukari 670101, NigeriaDepartment of Physics, Joseph Sarwuam Tarka University, Makurdi 970101, NigeriaDepartment of Physics, Joseph Sarwuam Tarka University, Makurdi 970101, NigeriaDepartment of Physics, Benue State University, Makurdi 970101, NigeriaDepartment of Physics, Benue State University, Makurdi 970101, NigeriaDepartment of Physics, Benue State University, Makurdi 970101, NigeriaOn glass substrates in a basic medium, Zn(1-x)SCux nanostructures were produced using a chemical bath approach for an adjusted dopant concentration (DC) (0.01–0.05 M) at 80 °C, and annealed at 300 °C for 2.5 h. The X-ray diffraction pattern revealed a α-ZnS phase in the produced films with a stronger diffraction peak at 31.775°. The creation of a high crystalline structure in the α-ZnS phase is confirmed by Raman spectral analysis. SEM images revealed a uniform and dense surface morphology with modest grain size sharing and no fractures. The existence of anticipated Zn, S, and Cu was detected by energy-dispersive X-ray spectroscopy. Spectrophotometry in the UV–visible range showed a redshift. Additionally, as DC is increased, the optical band gaps (3.82–3.99 eV) and transmittance were observed to increased. The projected crystallite sizes (3.58–2.45 nm) based on energy band gaps shrank as DC increased. Infrared spectroscopy using the Fourier transform did not reveal any contaminant signals. The electrical conductivity was p-type, according to the Hall Effect investigation.http://www.sciencedirect.com/science/article/pii/S2666950123001578OptoelectronicsZn(1-x)SCux optical bandgapChemical bath methodMolar concentrationSolar cells |
spellingShingle | Augustine A. McAsule Ngutor S. Akiiga Joshua S. Ikwe Newton F. Gesa Michael O. Awoji Victor W. Zhiya Peverga R. Jubu Terwase M. Aper Jonathan T. Ikyumbur Terver Daniel Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices Results in Optics Optoelectronics Zn(1-x)SCux optical bandgap Chemical bath method Molar concentration Solar cells |
title | Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices |
title_full | Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices |
title_fullStr | Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices |
title_full_unstemmed | Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices |
title_short | Optoelectronic properties of copper-fused Zn(1-x) SCux grown nanofilms for solar cell devices |
title_sort | optoelectronic properties of copper fused zn 1 x scux grown nanofilms for solar cell devices |
topic | Optoelectronics Zn(1-x)SCux optical bandgap Chemical bath method Molar concentration Solar cells |
url | http://www.sciencedirect.com/science/article/pii/S2666950123001578 |
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