Sublattice asymmetry of impurity doping in graphene: A review

In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state...

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Main Authors: James A. Lawlor, Mauro S. Ferreira
Format: Article
Language:English
Published: Beilstein-Institut 2014-08-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.5.133
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author James A. Lawlor
Mauro S. Ferreira
author_facet James A. Lawlor
Mauro S. Ferreira
author_sort James A. Lawlor
collection DOAJ
description In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.
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spelling doaj.art-4f26340b584e459e8f217495e17eddbd2022-12-21T22:52:43ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862014-08-01511210121710.3762/bjnano.5.1332190-4286-5-133Sublattice asymmetry of impurity doping in graphene: A reviewJames A. Lawlor0Mauro S. Ferreira1School of Physics, Trinity College Dublin, Dublin 2, IrelandSchool of Physics, Trinity College Dublin, Dublin 2, IrelandIn this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.https://doi.org/10.3762/bjnano.5.133band gapelectronic transportgraphenenitrogen dopingsublattice asymmetry
spellingShingle James A. Lawlor
Mauro S. Ferreira
Sublattice asymmetry of impurity doping in graphene: A review
Beilstein Journal of Nanotechnology
band gap
electronic transport
graphene
nitrogen doping
sublattice asymmetry
title Sublattice asymmetry of impurity doping in graphene: A review
title_full Sublattice asymmetry of impurity doping in graphene: A review
title_fullStr Sublattice asymmetry of impurity doping in graphene: A review
title_full_unstemmed Sublattice asymmetry of impurity doping in graphene: A review
title_short Sublattice asymmetry of impurity doping in graphene: A review
title_sort sublattice asymmetry of impurity doping in graphene a review
topic band gap
electronic transport
graphene
nitrogen doping
sublattice asymmetry
url https://doi.org/10.3762/bjnano.5.133
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AT maurosferreira sublatticeasymmetryofimpuritydopingingrapheneareview