Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors
Organic synaptic transistors using intrinsic (i.e., non‐doped) organic semiconductors have demonstrated various synaptic functions to mimic biological synapses, but the devices show limited long‐term retention behaviors although long‐term memory is essential for neuromorphic computing. To achieve lo...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2020-11-01
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| Series: | Advanced Intelligent Systems |
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| Online Access: | https://doi.org/10.1002/aisy.202000012 |
| _version_ | 1829478641300406272 |
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| author | Gyeong-Tak Go Yeongjun Lee Dae-Gyo Seo Mingyuan Pei Wanhee Lee Hoichang Yang Tae-Woo Lee |
| author_facet | Gyeong-Tak Go Yeongjun Lee Dae-Gyo Seo Mingyuan Pei Wanhee Lee Hoichang Yang Tae-Woo Lee |
| author_sort | Gyeong-Tak Go |
| collection | DOAJ |
| description | Organic synaptic transistors using intrinsic (i.e., non‐doped) organic semiconductors have demonstrated various synaptic functions to mimic biological synapses, but the devices show limited long‐term retention behaviors although long‐term memory is essential for neuromorphic computing. To achieve long‐term retention time, correlating the synaptic responses with the microstructures of polymer semiconductor is an imperative step. It is shown that synaptic plasticity in ion‐gel‐gated organic synaptic transistors (IGOSTs) can be modulated by controlling the microstructure of organic semiconductors and that long‐term memory retention can be significantly prolonged by increasing their crystallinity. The crystallinity of poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) films that are spun‐cast on bare and self‐assembled monolayer is systematically controlled, before and after thermal treatments. Long‐term retention tends to extend, as the crystallinity increases. To evaluate synaptic current decay behaviors, it is suggested that the relaxation is a result of de‐doping of the polymer semiconductor over time. The recognition of handwritten digits is simulated and a high classification accuracy (>92%) is achieved with IGOSTs including high crystalline P3HT film. The study provides fundamental information about the effects of polymer microstructure on synaptic plasticity of IGOSTs, which may be applicable in neuromorphic electronics. |
| first_indexed | 2024-12-14T17:18:57Z |
| format | Article |
| id | doaj.art-4f68777098374c5bae937699b641db4d |
| institution | Directory Open Access Journal |
| issn | 2640-4567 |
| language | English |
| last_indexed | 2024-12-14T17:18:57Z |
| publishDate | 2020-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj.art-4f68777098374c5bae937699b641db4d2022-12-21T22:53:22ZengWileyAdvanced Intelligent Systems2640-45672020-11-01211n/an/a10.1002/aisy.202000012Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic TransistorsGyeong-Tak Go0Yeongjun Lee1Dae-Gyo Seo2Mingyuan Pei3Wanhee Lee4Hoichang Yang5Tae-Woo Lee6Department of Materials Science and Engineering Seoul National University (SNU) Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University (SNU) Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University (SNU) Seoul 08826 Republic of KoreaDepartment of Chemical Engineering Inha University Incheon 22212 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University (SNU) Seoul 08826 Republic of KoreaDepartment of Chemical Engineering Inha University Incheon 22212 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University (SNU) Seoul 08826 Republic of KoreaOrganic synaptic transistors using intrinsic (i.e., non‐doped) organic semiconductors have demonstrated various synaptic functions to mimic biological synapses, but the devices show limited long‐term retention behaviors although long‐term memory is essential for neuromorphic computing. To achieve long‐term retention time, correlating the synaptic responses with the microstructures of polymer semiconductor is an imperative step. It is shown that synaptic plasticity in ion‐gel‐gated organic synaptic transistors (IGOSTs) can be modulated by controlling the microstructure of organic semiconductors and that long‐term memory retention can be significantly prolonged by increasing their crystallinity. The crystallinity of poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) films that are spun‐cast on bare and self‐assembled monolayer is systematically controlled, before and after thermal treatments. Long‐term retention tends to extend, as the crystallinity increases. To evaluate synaptic current decay behaviors, it is suggested that the relaxation is a result of de‐doping of the polymer semiconductor over time. The recognition of handwritten digits is simulated and a high classification accuracy (>92%) is achieved with IGOSTs including high crystalline P3HT film. The study provides fundamental information about the effects of polymer microstructure on synaptic plasticity of IGOSTs, which may be applicable in neuromorphic electronics.https://doi.org/10.1002/aisy.202000012artificial synapsesion-gel-gated organic transistorsneuromorphic computingneuromorphic electronicsorganic synaptic transistors |
| spellingShingle | Gyeong-Tak Go Yeongjun Lee Dae-Gyo Seo Mingyuan Pei Wanhee Lee Hoichang Yang Tae-Woo Lee Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors Advanced Intelligent Systems artificial synapses ion-gel-gated organic transistors neuromorphic computing neuromorphic electronics organic synaptic transistors |
| title | Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors |
| title_full | Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors |
| title_fullStr | Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors |
| title_full_unstemmed | Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors |
| title_short | Achieving Microstructure‐Controlled Synaptic Plasticity and Long‐Term Retention in Ion‐Gel‐Gated Organic Synaptic Transistors |
| title_sort | achieving microstructure controlled synaptic plasticity and long term retention in ion gel gated organic synaptic transistors |
| topic | artificial synapses ion-gel-gated organic transistors neuromorphic computing neuromorphic electronics organic synaptic transistors |
| url | https://doi.org/10.1002/aisy.202000012 |
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