Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering
Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/2/306 |
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| author | Giovanni Morello Stefania Milanese Maria Luisa De Giorgi Nicola Calisi Stefano Caporali Francesco Biccari Naomi Falsini Anna Vinattieri Marco Anni |
| author_facet | Giovanni Morello Stefania Milanese Maria Luisa De Giorgi Nicola Calisi Stefano Caporali Francesco Biccari Naomi Falsini Anna Vinattieri Marco Anni |
| author_sort | Giovanni Morello |
| collection | DOAJ |
| description | Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas which is readily attainable by vacuum deposition. Here, we report the amplified spontaneous emission (ASE) properties of two CsPbBr<sub>3</sub> films obtained by single-step RF-magnetron sputtering from a target containing precursors with variable compositions. Both the samples show ASE over a broad range of temperatures from 10 K up to 270 K. The ASE threshold results strongly temperature dependent, with the best performance occurring at about 50 K (down to 100 µJ/cm<sup>2</sup>), whereas at higher temperatures, there is evidence of thermally induced optical quenching. The observed temperature dependence is consistent with exciton detrapping up to about 50 K. At higher temperatures, progressive free exciton dissociation favors higher carrier mobility and increases trapping at defect states with consequent emission reduction and increased thresholds. The reported results open the way for effective large-area, high quality, organic solution-free deposited perovskite thin films for optoelectronic applications, with a remarkable capability to finely tune their physical properties. |
| first_indexed | 2024-03-09T11:32:30Z |
| format | Article |
| id | doaj.art-4f736a5921564f2393590e65b64f7ef4 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T11:32:30Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-4f736a5921564f2393590e65b64f7ef42023-11-30T23:48:03ZengMDPI AGNanomaterials2079-49912023-01-0113230610.3390/nano13020306Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron SputteringGiovanni Morello0Stefania Milanese1Maria Luisa De Giorgi2Nicola Calisi3Stefano Caporali4Francesco Biccari5Naomi Falsini6Anna Vinattieri7Marco Anni8CNR-IMM, Institute for Microelectronic and Microsystems Unit of Lecce, Via per Monteroni, 73100 Lecce, ItalyDipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyDipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyDepartment of Industrial Engineering, University of Florence, Via di S. Marta 3, 50139 Firenze, ItalyDepartment of Industrial Engineering, University of Florence, Via di S. Marta 3, 50139 Firenze, ItalyDepartment of Physics and Astronomy and LENS, University of Florence, Via G. Sansone1, 50125 Sesto Fiorentino (FI), ItalyNuclear Safety, Security and Sustainability Division, Fusion and Technology for Nuclear Safety and Security Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Via Martiri di Monte Sole 4, 40129 Bologna, ItalyDepartment of Physics and Astronomy and LENS, University of Florence, Via G. Sansone1, 50125 Sesto Fiorentino (FI), ItalyDipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, ItalyDue to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas which is readily attainable by vacuum deposition. Here, we report the amplified spontaneous emission (ASE) properties of two CsPbBr<sub>3</sub> films obtained by single-step RF-magnetron sputtering from a target containing precursors with variable compositions. Both the samples show ASE over a broad range of temperatures from 10 K up to 270 K. The ASE threshold results strongly temperature dependent, with the best performance occurring at about 50 K (down to 100 µJ/cm<sup>2</sup>), whereas at higher temperatures, there is evidence of thermally induced optical quenching. The observed temperature dependence is consistent with exciton detrapping up to about 50 K. At higher temperatures, progressive free exciton dissociation favors higher carrier mobility and increases trapping at defect states with consequent emission reduction and increased thresholds. The reported results open the way for effective large-area, high quality, organic solution-free deposited perovskite thin films for optoelectronic applications, with a remarkable capability to finely tune their physical properties.https://www.mdpi.com/2079-4991/13/2/306perovskitemagnetron-sputteringthin-filmscesium lead halidesamplified spontaneous emission |
| spellingShingle | Giovanni Morello Stefania Milanese Maria Luisa De Giorgi Nicola Calisi Stefano Caporali Francesco Biccari Naomi Falsini Anna Vinattieri Marco Anni Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering Nanomaterials perovskite magnetron-sputtering thin-films cesium lead halides amplified spontaneous emission |
| title | Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering |
| title_full | Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering |
| title_fullStr | Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering |
| title_full_unstemmed | Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering |
| title_short | Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering |
| title_sort | temperature dependent amplified spontaneous emission in cspbbr sub 3 sub thin films deposited by single step rf magnetron sputtering |
| topic | perovskite magnetron-sputtering thin-films cesium lead halides amplified spontaneous emission |
| url | https://www.mdpi.com/2079-4991/13/2/306 |
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