Multiscale investigation of graphene layers on 6H-SiC(000-1)

<p>Abstract</p> <p>In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-&#956;m scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thicknes...

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Main Authors: Hiebel Fanny, Mahmood Ather, Mallet Pierre, Naud Cecile, Veuillen Jean-Yves, Tiberj Antoine, Huntzinger Jean-Roch, Camassel Jean
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/171
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author Hiebel Fanny
Mahmood Ather
Mallet Pierre
Naud Cecile
Veuillen Jean-Yves
Tiberj Antoine
Huntzinger Jean-Roch
Camassel Jean
author_facet Hiebel Fanny
Mahmood Ather
Mallet Pierre
Naud Cecile
Veuillen Jean-Yves
Tiberj Antoine
Huntzinger Jean-Roch
Camassel Jean
author_sort Hiebel Fanny
collection DOAJ
description <p>Abstract</p> <p>In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-&#956;m scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM). Finally, STM (at the nm scale) and Raman spectroscopy (at the &#956;m scale) show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.</p>
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spelling doaj.art-4f95672891c345bba7d713837c0f70972023-09-02T12:56:23ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161171Multiscale investigation of graphene layers on 6H-SiC(000-1)Hiebel FannyMahmood AtherMallet PierreNaud CecileVeuillen Jean-YvesTiberj AntoineHuntzinger Jean-RochCamassel Jean<p>Abstract</p> <p>In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-&#956;m scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM). Finally, STM (at the nm scale) and Raman spectroscopy (at the &#956;m scale) show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.</p>http://www.nanoscalereslett.com/content/6/1/171
spellingShingle Hiebel Fanny
Mahmood Ather
Mallet Pierre
Naud Cecile
Veuillen Jean-Yves
Tiberj Antoine
Huntzinger Jean-Roch
Camassel Jean
Multiscale investigation of graphene layers on 6H-SiC(000-1)
Nanoscale Research Letters
title Multiscale investigation of graphene layers on 6H-SiC(000-1)
title_full Multiscale investigation of graphene layers on 6H-SiC(000-1)
title_fullStr Multiscale investigation of graphene layers on 6H-SiC(000-1)
title_full_unstemmed Multiscale investigation of graphene layers on 6H-SiC(000-1)
title_short Multiscale investigation of graphene layers on 6H-SiC(000-1)
title_sort multiscale investigation of graphene layers on 6h sic 000 1
url http://www.nanoscalereslett.com/content/6/1/171
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