Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance
A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate b...
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Frontiers Media S.A.
2021-06-01
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| Series: | Frontiers in Materials |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.648049/full |
| _version_ | 1819069591702208512 |
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| author | Jia-Jian Chen Zi-Hao Wang Zi-Hao Wang Wen-Qi Wei Ting Wang Ting Wang Ting Wang Jian-Jun Zhang Jian-Jun Zhang Jian-Jun Zhang |
| author_facet | Jia-Jian Chen Zi-Hao Wang Zi-Hao Wang Wen-Qi Wei Ting Wang Ting Wang Ting Wang Jian-Jun Zhang Jian-Jun Zhang Jian-Jun Zhang |
| author_sort | Jia-Jian Chen |
| collection | DOAJ |
| description | A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator. |
| first_indexed | 2024-12-21T16:52:29Z |
| format | Article |
| id | doaj.art-4fbe2821f44348bf8cb1e32281984699 |
| institution | Directory Open Access Journal |
| issn | 2296-8016 |
| language | English |
| last_indexed | 2024-12-21T16:52:29Z |
| publishDate | 2021-06-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Materials |
| spelling | doaj.art-4fbe2821f44348bf8cb1e322819846992022-12-21T18:56:50ZengFrontiers Media S.A.Frontiers in Materials2296-80162021-06-01810.3389/fmats.2021.648049648049Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback ResistanceJia-Jian Chen0Zi-Hao Wang1Zi-Hao Wang2Wen-Qi Wei3Ting Wang4Ting Wang5Ting Wang6Jian-Jun Zhang7Jian-Jun Zhang8Jian-Jun Zhang9Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaCenter of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, ChinaSongshan Lake Materials Laboratory, Dongguan, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaCenter of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, ChinaSongshan Lake Materials Laboratory, Dongguan, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaCenter of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, ChinaSongshan Lake Materials Laboratory, Dongguan, ChinaA feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.https://www.frontiersin.org/articles/10.3389/fmats.2021.648049/fullquantum dotexternal optical feedbacksilicon photonic integrationdistributed feedback laserfeedback sensitivity |
| spellingShingle | Jia-Jian Chen Zi-Hao Wang Zi-Hao Wang Wen-Qi Wei Ting Wang Ting Wang Ting Wang Jian-Jun Zhang Jian-Jun Zhang Jian-Jun Zhang Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance Frontiers in Materials quantum dot external optical feedback silicon photonic integration distributed feedback laser feedback sensitivity |
| title | Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance |
| title_full | Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance |
| title_fullStr | Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance |
| title_full_unstemmed | Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance |
| title_short | Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance |
| title_sort | sole excited state inas quantum dot laser on silicon with strong feedback resistance |
| topic | quantum dot external optical feedback silicon photonic integration distributed feedback laser feedback sensitivity |
| url | https://www.frontiersin.org/articles/10.3389/fmats.2021.648049/full |
| work_keys_str_mv | AT jiajianchen soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT zihaowang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT zihaowang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT wenqiwei soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT tingwang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT tingwang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT tingwang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT jianjunzhang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT jianjunzhang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance AT jianjunzhang soleexcitedstateinasquantumdotlaseronsiliconwithstrongfeedbackresistance |