A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs
The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper pr...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-01-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/2/144 |
| _version_ | 1798002419156647936 |
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| author | Hamidreza Ghorbani Vicent Sala Alejandro Paredes Camacho Jose Luis Romeral Martinez |
| author_facet | Hamidreza Ghorbani Vicent Sala Alejandro Paredes Camacho Jose Luis Romeral Martinez |
| author_sort | Hamidreza Ghorbani |
| collection | DOAJ |
| description | The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper proposes a new closed-loop gate driver to improve switching trajectory in insulated gate bipolar transistors (IGBTs) at the hard switching condition. The proposed closed-loop gate driver is based on an active gate voltage control method, which deals with emitter voltage (<i>V<sub>Ee</sub></i>) for controlling <i>di<sub>C</sub>/dt</i> and gets feedback from the output voltage (<i>v<sub>CE</sub></i>) in order to control <i>dv<sub>CE</sub>/dt</i>. The sampled voltage signals modify the profile of the applied gate voltage (<i>v<sub>gg</sub></i>). As a result, the desired gate driver (GD) improves the switching transients with minimum switching loss. The operation principle and implementation of the controller in the GD are thoroughly described. It can be observed that the new GD controls both <i>dv<sub>CE</sub>/dt</i> and <i>di<sub>C</sub>/dt</i> accurately independent of the variable parameters. The new control method is verified by experimental results. As a current issue, the known trade-off between switching losses and EMI is improved by this simple and effective control method. |
| first_indexed | 2024-04-11T11:51:57Z |
| format | Article |
| id | doaj.art-4feae411016d479284d30e354c061942 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T11:51:57Z |
| publishDate | 2019-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-4feae411016d479284d30e354c0619422022-12-22T04:25:18ZengMDPI AGElectronics2079-92922019-01-018214410.3390/electronics8020144electronics8020144A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTsHamidreza Ghorbani0Vicent Sala1Alejandro Paredes Camacho2Jose Luis Romeral Martinez3Department Electronic, MCIA research center, Universitat Politècnica de Catalunya (UPC), 08222 Terrassa, SpainDepartment Electronic, MCIA research center, Universitat Politècnica de Catalunya (UPC), 08222 Terrassa, SpainDepartment Electronic, MCIA research center, Universitat Politècnica de Catalunya (UPC), 08222 Terrassa, SpainDepartment Electronic, MCIA research center, Universitat Politècnica de Catalunya (UPC), 08222 Terrassa, SpainThe increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper proposes a new closed-loop gate driver to improve switching trajectory in insulated gate bipolar transistors (IGBTs) at the hard switching condition. The proposed closed-loop gate driver is based on an active gate voltage control method, which deals with emitter voltage (<i>V<sub>Ee</sub></i>) for controlling <i>di<sub>C</sub>/dt</i> and gets feedback from the output voltage (<i>v<sub>CE</sub></i>) in order to control <i>dv<sub>CE</sub>/dt</i>. The sampled voltage signals modify the profile of the applied gate voltage (<i>v<sub>gg</sub></i>). As a result, the desired gate driver (GD) improves the switching transients with minimum switching loss. The operation principle and implementation of the controller in the GD are thoroughly described. It can be observed that the new GD controls both <i>dv<sub>CE</sub>/dt</i> and <i>di<sub>C</sub>/dt</i> accurately independent of the variable parameters. The new control method is verified by experimental results. As a current issue, the known trade-off between switching losses and EMI is improved by this simple and effective control method.https://www.mdpi.com/2079-9292/8/2/144gate driver (GD)IGBTswitching losseselectromagnetic interference (EMI) |
| spellingShingle | Hamidreza Ghorbani Vicent Sala Alejandro Paredes Camacho Jose Luis Romeral Martinez A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs Electronics gate driver (GD) IGBT switching losses electromagnetic interference (EMI) |
| title | A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs |
| title_full | A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs |
| title_fullStr | A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs |
| title_full_unstemmed | A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs |
| title_short | A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs |
| title_sort | simple closed loop active gate voltage driver for controlling di sub c sub dt and dv sub ce sub dt in igbts |
| topic | gate driver (GD) IGBT switching losses electromagnetic interference (EMI) |
| url | https://www.mdpi.com/2079-9292/8/2/144 |
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