Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition

Bibliographic Details
Main Authors: Yoshiki Nakajima, Hiromasa Murata, Noriyuki Saitoh, Noriko Yoshizawa, Takashi Suemasu, Kaoru Toko
Format: Article
Language:English
Published: American Chemical Society 2019-04-01
Series:ACS Omega
Online Access:http://dx.doi.org/10.1021/acsomega.9b00420
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author Yoshiki Nakajima
Hiromasa Murata
Noriyuki Saitoh
Noriko Yoshizawa
Takashi Suemasu
Kaoru Toko
author_facet Yoshiki Nakajima
Hiromasa Murata
Noriyuki Saitoh
Noriko Yoshizawa
Takashi Suemasu
Kaoru Toko
author_sort Yoshiki Nakajima
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spelling doaj.art-505d3a2dba6e4a2da12b1dfb60ec8a992022-12-21T19:14:32ZengAmerican Chemical SocietyACS Omega2470-13432019-04-01446677668010.1021/acsomega.9b00420Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering DepositionYoshiki Nakajima0Hiromasa Murata1Noriyuki Saitoh2Noriko Yoshizawa3Takashi Suemasu4Kaoru Toko5Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, JapanInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, JapanElectron Microscope Facility, TIA, AIST, Tsukuba, JapanElectron Microscope Facility, TIA, AIST, Tsukuba, JapanInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, JapanInstitute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, Japanhttp://dx.doi.org/10.1021/acsomega.9b00420
spellingShingle Yoshiki Nakajima
Hiromasa Murata
Noriyuki Saitoh
Noriko Yoshizawa
Takashi Suemasu
Kaoru Toko
Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
ACS Omega
title Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
title_full Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
title_fullStr Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
title_full_unstemmed Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
title_short Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
title_sort low temperature 400 °c synthesis of multilayer graphene by metal assisted sputtering deposition
url http://dx.doi.org/10.1021/acsomega.9b00420
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AT hiromasamurata lowtemperature400csynthesisofmultilayergraphenebymetalassistedsputteringdeposition
AT noriyukisaitoh lowtemperature400csynthesisofmultilayergraphenebymetalassistedsputteringdeposition
AT norikoyoshizawa lowtemperature400csynthesisofmultilayergraphenebymetalassistedsputteringdeposition
AT takashisuemasu lowtemperature400csynthesisofmultilayergraphenebymetalassistedsputteringdeposition
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