Ultrafast strong-field terahertz nonlinear nanometasurfaces
Strong-field terahertz (THz)–matter interaction permits the investigation of nonequilibrium behaviors in the nonperturbative zone. However, the unavailability of a high-field free-space THz source with high repetition rates, excellent beam quality, and high stability hinders its development. In this...
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Format: | Article |
Language: | English |
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De Gruyter
2023-02-01
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Series: | Nanophotonics |
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Online Access: | https://doi.org/10.1515/nanoph-2022-0766 |
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author | Cai Jiahua Chen Sai Geng Chunyan Li Jianghao Quan Baogang Wu Xiaojun |
author_facet | Cai Jiahua Chen Sai Geng Chunyan Li Jianghao Quan Baogang Wu Xiaojun |
author_sort | Cai Jiahua |
collection | DOAJ |
description | Strong-field terahertz (THz)–matter interaction permits the investigation of nonequilibrium behaviors in the nonperturbative zone. However, the unavailability of a high-field free-space THz source with high repetition rates, excellent beam quality, and high stability hinders its development. In this work, we obtain the nonlinear modulation dynamics of a “THz-nano” metasurface on silicon substrates using a time-resolved strong-field THz-pump THz-probe (TPTP) with a thousand orders local field enhancement through confining THz waves into nano-gaps (15 nm, λ/33,000). By switching the THz field strength, we successfully realize a self-modulation ∼50 GHz frequency shift, which is further verified via the TPTP ultrafast time-resolution technique. The phenomenon is attributed to the impact ionization (IMI) of the silicon substrate under the excitation of extremely confined strong THz fields in nano-gaps. Both strong-field induced intervalley scattering (IVS) and IMI effects of photodoped silicon occurring in nano-gaps and large-area substrates were also observed by 800 nm optical injection of carriers. These aforementioned findings provide a robust research platform for the realization of ultrafast time resolution nanoscale strong-field THz–matter interaction and new ideas for nonextreme laboratories to realize extreme THz science, applications, and THz nonlinear modulation device development. |
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format | Article |
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institution | Directory Open Access Journal |
issn | 2192-8614 |
language | English |
last_indexed | 2025-02-16T13:05:52Z |
publishDate | 2023-02-01 |
publisher | De Gruyter |
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series | Nanophotonics |
spelling | doaj.art-507afbb5f8104506aff179bba979527a2025-02-02T15:46:12ZengDe GruyterNanophotonics2192-86142023-02-0112132517252610.1515/nanoph-2022-0766Ultrafast strong-field terahertz nonlinear nanometasurfacesCai Jiahua0Chen Sai1Geng Chunyan2Li Jianghao3Quan Baogang4Wu Xiaojun5School of Electronic and Information Engineering, Beihang University, Beijing100191, ChinaSchool of Electronic and Information Engineering, Beihang University, Beijing100191, ChinaSchool of Electronic and Information Engineering, Beihang University, Beijing100191, ChinaSchool of Electronic and Information Engineering, Beihang University, Beijing100191, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing100190, ChinaZhangjiang Laboratory, Shanghai 201204, ChinaStrong-field terahertz (THz)–matter interaction permits the investigation of nonequilibrium behaviors in the nonperturbative zone. However, the unavailability of a high-field free-space THz source with high repetition rates, excellent beam quality, and high stability hinders its development. In this work, we obtain the nonlinear modulation dynamics of a “THz-nano” metasurface on silicon substrates using a time-resolved strong-field THz-pump THz-probe (TPTP) with a thousand orders local field enhancement through confining THz waves into nano-gaps (15 nm, λ/33,000). By switching the THz field strength, we successfully realize a self-modulation ∼50 GHz frequency shift, which is further verified via the TPTP ultrafast time-resolution technique. The phenomenon is attributed to the impact ionization (IMI) of the silicon substrate under the excitation of extremely confined strong THz fields in nano-gaps. Both strong-field induced intervalley scattering (IVS) and IMI effects of photodoped silicon occurring in nano-gaps and large-area substrates were also observed by 800 nm optical injection of carriers. These aforementioned findings provide a robust research platform for the realization of ultrafast time resolution nanoscale strong-field THz–matter interaction and new ideas for nonextreme laboratories to realize extreme THz science, applications, and THz nonlinear modulation device development.https://doi.org/10.1515/nanoph-2022-0766impact ionizationintervalley scatteringphotodopingthz-pump thz-probe |
spellingShingle | Cai Jiahua Chen Sai Geng Chunyan Li Jianghao Quan Baogang Wu Xiaojun Ultrafast strong-field terahertz nonlinear nanometasurfaces Nanophotonics impact ionization intervalley scattering photodoping thz-pump thz-probe |
title | Ultrafast strong-field terahertz nonlinear nanometasurfaces |
title_full | Ultrafast strong-field terahertz nonlinear nanometasurfaces |
title_fullStr | Ultrafast strong-field terahertz nonlinear nanometasurfaces |
title_full_unstemmed | Ultrafast strong-field terahertz nonlinear nanometasurfaces |
title_short | Ultrafast strong-field terahertz nonlinear nanometasurfaces |
title_sort | ultrafast strong field terahertz nonlinear nanometasurfaces |
topic | impact ionization intervalley scattering photodoping thz-pump thz-probe |
url | https://doi.org/10.1515/nanoph-2022-0766 |
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