Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness
Abstract We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rho...
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| Format: | Article |
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Nature Portfolio
2022-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-13600-8 |
| _version_ | 1811241260085673984 |
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| author | Sudhanshu Gautam V. Aggarwal Bheem Singh V. P. S. Awana Ramakrishnan Ganesan S. S. Kushvaha |
| author_facet | Sudhanshu Gautam V. Aggarwal Bheem Singh V. P. S. Awana Ramakrishnan Ganesan S. S. Kushvaha |
| author_sort | Sudhanshu Gautam |
| collection | DOAJ |
| description | Abstract We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rhombohedral c-axis {0003n} oriented Bi2Se3 films on sapphire (0001). Vibrational modes of Bi2Se3 thin films were obtained in the low wavenumber region using Raman spectroscopy. The surface roughness of sputtered Bi2Se3 thin films on sapphire (0001) substrates were obtained to be ~ 2.26–6.45 nm. The chemical and electronic state of the deposited Bi2Se3 was confirmed by X-ray photoelectron spectroscopy and it showed the formation of Bi2Se3 compound. Resistivity versus temperature measurements show the metallic nature of Bi2Se3 films and a slight up-turn transition in resistivity at lower temperatures < 25 K. The positive magneto-resistance value of Bi2Se3 films measured at low temperatures (2–100 K) confirmed the gapless topological surface states in Bi2Se3 thin films. The quantum correction to the magnetoconductivity of thin films in low magnetic field is done by employing Hikami–Larkin–Nagaoka theory and the calculated value of coefficient ‘α’ (defining number of conduction channels) was found to be 0.65, 0.83 and 1.56 for film thickness of 40, 80 and 160 nm, respectively. These observations indicate that the top and bottom surface states are coupled with the bulk states and the conduction mechanism in Bi2Se3 thin films varied with the film thicknesses. |
| first_indexed | 2024-04-12T13:33:46Z |
| format | Article |
| id | doaj.art-509082964dbf4584a2fc6cbb326082be |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-12T13:33:46Z |
| publishDate | 2022-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-509082964dbf4584a2fc6cbb326082be2022-12-22T03:31:06ZengNature PortfolioScientific Reports2045-23222022-06-0112111010.1038/s41598-022-13600-8Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thicknessSudhanshu Gautam0V. Aggarwal1Bheem Singh2V. P. S. Awana3Ramakrishnan Ganesan4S. S. Kushvaha5CSIR- National Physical LaboratoryCSIR- National Physical LaboratoryCSIR- National Physical LaboratoryCSIR- National Physical LaboratoryDepartment of Chemistry, Birla Institute of Technology and Science (BITS)CSIR- National Physical LaboratoryAbstract We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rhombohedral c-axis {0003n} oriented Bi2Se3 films on sapphire (0001). Vibrational modes of Bi2Se3 thin films were obtained in the low wavenumber region using Raman spectroscopy. The surface roughness of sputtered Bi2Se3 thin films on sapphire (0001) substrates were obtained to be ~ 2.26–6.45 nm. The chemical and electronic state of the deposited Bi2Se3 was confirmed by X-ray photoelectron spectroscopy and it showed the formation of Bi2Se3 compound. Resistivity versus temperature measurements show the metallic nature of Bi2Se3 films and a slight up-turn transition in resistivity at lower temperatures < 25 K. The positive magneto-resistance value of Bi2Se3 films measured at low temperatures (2–100 K) confirmed the gapless topological surface states in Bi2Se3 thin films. The quantum correction to the magnetoconductivity of thin films in low magnetic field is done by employing Hikami–Larkin–Nagaoka theory and the calculated value of coefficient ‘α’ (defining number of conduction channels) was found to be 0.65, 0.83 and 1.56 for film thickness of 40, 80 and 160 nm, respectively. These observations indicate that the top and bottom surface states are coupled with the bulk states and the conduction mechanism in Bi2Se3 thin films varied with the film thicknesses.https://doi.org/10.1038/s41598-022-13600-8 |
| spellingShingle | Sudhanshu Gautam V. Aggarwal Bheem Singh V. P. S. Awana Ramakrishnan Ganesan S. S. Kushvaha Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness Scientific Reports |
| title | Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness |
| title_full | Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness |
| title_fullStr | Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness |
| title_full_unstemmed | Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness |
| title_short | Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness |
| title_sort | signature of weak antilocalization in sputtered topological insulator bi2se3 thin films with varying thickness |
| url | https://doi.org/10.1038/s41598-022-13600-8 |
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