Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier
In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology. To improve the small-signal performance and the power-handling capability of the limiter-LN...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8736967/ |
| _version_ | 1818347912427470848 |
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| author | Lin Yang Lin-An Yang Taotao Rong Yang Li Zhi Jin Yue Hao |
| author_facet | Lin Yang Lin-An Yang Taotao Rong Yang Li Zhi Jin Yue Hao |
| author_sort | Lin Yang |
| collection | DOAJ |
| description | In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology. To improve the small-signal performance and the power-handling capability of the limiter-LNA, the improvement of the PIN-limiter circuit structure and the survivability of the LNA network are proposed. In addition, the total chip area is 2.5 mm × 1.2 mm with an equalizer integrated on chip behind the limiter-LNA to improve the bandwidth with a minimum impact on overall NF. The measurements show that the proposed limiter-LNA with only two-stage limiter structure tolerates up to 38 dBm continuous wave (CW) input power without failure, and the average gain and the noise figure for the limiter-LNA are 17 dB and 2.2 - 2.6 dB, respectively, on the 30 - 38 GHz frequency bandwidth. |
| first_indexed | 2024-12-13T17:41:42Z |
| format | Article |
| id | doaj.art-50bb0454d78a4bc9ba95a78373ae71fb |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-13T17:41:42Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-50bb0454d78a4bc9ba95a78373ae71fb2022-12-21T23:36:43ZengIEEEIEEE Access2169-35362019-01-017882758828110.1109/ACCESS.2019.29232108736967Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise AmplifierLin Yang0https://orcid.org/0000-0002-1981-5977Lin-An Yang1Taotao Rong2Yang Li3Zhi Jin4Yue Hao5State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaState Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaIn this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology. To improve the small-signal performance and the power-handling capability of the limiter-LNA, the improvement of the PIN-limiter circuit structure and the survivability of the LNA network are proposed. In addition, the total chip area is 2.5 mm × 1.2 mm with an equalizer integrated on chip behind the limiter-LNA to improve the bandwidth with a minimum impact on overall NF. The measurements show that the proposed limiter-LNA with only two-stage limiter structure tolerates up to 38 dBm continuous wave (CW) input power without failure, and the average gain and the noise figure for the limiter-LNA are 17 dB and 2.2 - 2.6 dB, respectively, on the 30 - 38 GHz frequency bandwidth.https://ieeexplore.ieee.org/document/8736967/GaAs pHEMTintegrated limiter low noise amplifier (LNA)MMICnoise figure (NF)PIN diode |
| spellingShingle | Lin Yang Lin-An Yang Taotao Rong Yang Li Zhi Jin Yue Hao Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier IEEE Access GaAs pHEMT integrated limiter low noise amplifier (LNA) MMIC noise figure (NF) PIN diode |
| title | Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier |
| title_full | Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier |
| title_fullStr | Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier |
| title_full_unstemmed | Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier |
| title_short | Codesign of <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier |
| title_sort | codesign of inline formula tex math notation latex k tex math inline formula a band integrated gaas pin diodes limiter and low noise amplifier |
| topic | GaAs pHEMT integrated limiter low noise amplifier (LNA) MMIC noise figure (NF) PIN diode |
| url | https://ieeexplore.ieee.org/document/8736967/ |
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