Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

<p>Abstract</p> <p>Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8&#176; off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost...

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Main Authors: Caboni Alessandra, Godignon Philipe, Camara Nicolas, Jouault Benoit, Jabakhanji Bilal, Tiberj Antoine, Consejo Christophe, Camassel Jean
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/141
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author Caboni Alessandra
Godignon Philipe
Camara Nicolas
Jouault Benoit
Jabakhanji Bilal
Tiberj Antoine
Consejo Christophe
Camassel Jean
author_facet Caboni Alessandra
Godignon Philipe
Camara Nicolas
Jouault Benoit
Jabakhanji Bilal
Tiberj Antoine
Consejo Christophe
Camassel Jean
author_sort Caboni Alessandra
collection DOAJ
description <p>Abstract</p> <p>Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8&#176; off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate <it>p</it>-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.</p>
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spelling doaj.art-50d60185e734473eb7975041f890860f2023-09-02T15:06:55ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161141Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substratesCaboni AlessandraGodignon PhilipeCamara NicolasJouault BenoitJabakhanji BilalTiberj AntoineConsejo ChristopheCamassel Jean<p>Abstract</p> <p>Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8&#176; off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate <it>p</it>-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.</p>http://www.nanoscalereslett.com/content/6/1/141
spellingShingle Caboni Alessandra
Godignon Philipe
Camara Nicolas
Jouault Benoit
Jabakhanji Bilal
Tiberj Antoine
Consejo Christophe
Camassel Jean
Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
Nanoscale Research Letters
title Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
title_full Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
title_fullStr Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
title_full_unstemmed Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
title_short Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
title_sort multidimensional characterization landau levels and density of states in epitaxial graphene grown on sic substrates
url http://www.nanoscalereslett.com/content/6/1/141
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