Silicon-on-Nitride Waveguide With Ultralow Dispersion Over an Octave-Spanning Mid-Infrared Wavelength Range
The proposed silicon-on-nitride (SON) waveguide exhibits an ultrabroadband (4200 nm), low chromatic dispersion in the mid-infrared (MIR) wavelength region from 2430 to 6630 nm. It has two zero-dispersion wavelengths within the span. Even at 6 , the nonlinear coefficients of the SON waveguides are st...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2012-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6105501/ |
| Summary: | The proposed silicon-on-nitride (SON) waveguide exhibits an ultrabroadband (4200 nm), low chromatic dispersion in the mid-infrared (MIR) wavelength region from 2430 to 6630 nm. It has two zero-dispersion wavelengths within the span. Even at 6 , the nonlinear coefficients of the SON waveguides are still comparable with the ones of integrated waveguides around 1550 nm, which are widely used for octave-spanning nonlinear process. This enables a potential nonlinear optical platform for broadband signal processing across the over-one-octave MIR bandwidth. |
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| ISSN: | 1943-0655 |