Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon

In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20...

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Main Author: Uday Muhsin Nayef
Format: Article
Language:English
Published: University of Baghdad 2019-02-01
Series:Iraqi Journal of Physics
Subjects:
Online Access:https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/373
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author Uday Muhsin Nayef
author_facet Uday Muhsin Nayef
author_sort Uday Muhsin Nayef
collection DOAJ
description In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20min). The films were characterized by the measurement of AFM, FTIR spectroscopy and electrical properties.   Atomic Force microscopy confirms the nanometric size.Chemical components during the electrochemical etching show on surface of PSchanges take place in the spectrum of CdO deposited PS when compared to as-anodized PS. The electrical properties of prepared PS; namely current density-voltage characteristics under dark, show that the pass current through the PS layer is more than that obtained from the CdO/PS/Si which is related to increasing junction resistivity that come from increasing in depletion width.
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spelling doaj.art-50faf5cdfa8f4d69aee012c9cd8f36fb2023-03-10T20:56:57ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482019-02-01112110.30723/ijp.v11i21.373Morphology, chemical and electrical properties of CdO Nanoparticles on porous siliconUday Muhsin Nayef In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20min). The films were characterized by the measurement of AFM, FTIR spectroscopy and electrical properties.   Atomic Force microscopy confirms the nanometric size.Chemical components during the electrochemical etching show on surface of PSchanges take place in the spectrum of CdO deposited PS when compared to as-anodized PS. The electrical properties of prepared PS; namely current density-voltage characteristics under dark, show that the pass current through the PS layer is more than that obtained from the CdO/PS/Si which is related to increasing junction resistivity that come from increasing in depletion width. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/373CdO nanoparticles, Porous Silicon, AFM, FTIR, Electrical properties.
spellingShingle Uday Muhsin Nayef
Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
Iraqi Journal of Physics
CdO nanoparticles, Porous Silicon, AFM, FTIR, Electrical properties.
title Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
title_full Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
title_fullStr Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
title_full_unstemmed Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
title_short Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon
title_sort morphology chemical and electrical properties of cdo nanoparticles on porous silicon
topic CdO nanoparticles, Porous Silicon, AFM, FTIR, Electrical properties.
url https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/373
work_keys_str_mv AT udaymuhsinnayef morphologychemicalandelectricalpropertiesofcdonanoparticlesonporoussilicon