Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study

Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study

A combination of recessed-gate and gate-field plate in lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer Aided Design study to improve its ON resistance (RON) and breakdown voltage. Enhancement-mode (E-mode) is achieved by controlling t...

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Bibliographic Details
Main Authors:	Huy-Binh Do, Anh-Vu Phan-Gia, Van Quy Nguyen, Maria Merlyne De Souza
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2022-06-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0094418

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