InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/2/408 |
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| author | Krzysztof Gibasiewicz Anna Kafar Dario Schiavon Kiran Saba Łucja Marona Eliana Kamińska Piotr Perlin |
| author_facet | Krzysztof Gibasiewicz Anna Kafar Dario Schiavon Kiran Saba Łucja Marona Eliana Kamińska Piotr Perlin |
| author_sort | Krzysztof Gibasiewicz |
| collection | DOAJ |
| description | The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers. |
| first_indexed | 2024-03-11T08:24:05Z |
| format | Article |
| id | doaj.art-5100f264e4f54e0393103b22eb4ed70c |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T08:24:05Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-5100f264e4f54e0393103b22eb4ed70c2023-11-16T22:11:49ZengMDPI AGMicromachines2072-666X2023-02-0114240810.3390/mi14020408InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit ApplicationsKrzysztof Gibasiewicz0Anna Kafar1Dario Schiavon2Kiran Saba3Łucja Marona4Eliana Kamińska5Piotr Perlin6Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandThe main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers.https://www.mdpi.com/2072-666X/14/2/408InGaN laserFabry–Perotwet etching GaNGaN TMAH |
| spellingShingle | Krzysztof Gibasiewicz Anna Kafar Dario Schiavon Kiran Saba Łucja Marona Eliana Kamińska Piotr Perlin InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications Micromachines InGaN laser Fabry–Perot wet etching GaN GaN TMAH |
| title | InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications |
| title_full | InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications |
| title_fullStr | InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications |
| title_full_unstemmed | InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications |
| title_short | InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications |
| title_sort | ingan laser diodes with etched facets for photonic integrated circuit applications |
| topic | InGaN laser Fabry–Perot wet etching GaN GaN TMAH |
| url | https://www.mdpi.com/2072-666X/14/2/408 |
| work_keys_str_mv | AT krzysztofgibasiewicz inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications AT annakafar inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications AT darioschiavon inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications AT kiransaba inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications AT łucjamarona inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications AT elianakaminska inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications AT piotrperlin inganlaserdiodeswithetchedfacetsforphotonicintegratedcircuitapplications |