Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers
Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the sho...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2020-01-01
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| Series: | EPJ Photovoltaics |
| Subjects: | |
| Online Access: | https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv200011/pv200011.html |
| _version_ | 1818779168216711168 |
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| author | Kanevce Ana Paetel Stefan Hariskos Dimitrios Magorian Friedlmeier Theresa |
| author_facet | Kanevce Ana Paetel Stefan Hariskos Dimitrios Magorian Friedlmeier Theresa |
| author_sort | Kanevce Ana |
| collection | DOAJ |
| description | Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers. |
| first_indexed | 2024-12-18T11:56:19Z |
| format | Article |
| id | doaj.art-510e38266767484cb7f047410a717122 |
| institution | Directory Open Access Journal |
| issn | 2105-0716 |
| language | English |
| last_indexed | 2024-12-18T11:56:19Z |
| publishDate | 2020-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Photovoltaics |
| spelling | doaj.art-510e38266767484cb7f047410a7171222022-12-21T21:09:02ZengEDP SciencesEPJ Photovoltaics2105-07162020-01-0111810.1051/epjpv/2020005pv200011Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layersKanevce AnaPaetel StefanHariskos DimitriosMagorian Friedlmeier TheresaAlkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers.https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv200011/pv200011.htmlcigs solar cellsrbf-pdtzn(o,s)characterization |
| spellingShingle | Kanevce Ana Paetel Stefan Hariskos Dimitrios Magorian Friedlmeier Theresa Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers EPJ Photovoltaics cigs solar cells rbf-pdt zn(o,s) characterization |
| title | Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
| title_full | Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
| title_fullStr | Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
| title_full_unstemmed | Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
| title_short | Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
| title_sort | impact of rbf pdt on cu in ga se2 solar cells with cds and zn o s buffer layers |
| topic | cigs solar cells rbf-pdt zn(o,s) characterization |
| url | https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv200011/pv200011.html |
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