TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path

We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO<sub>2</sub> breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage...

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Bibliographic Details
Main Authors: Yu Zhou, Tomohito Kawashima, Diing Shenp Ang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7872399/
Description
Summary:We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO<sub>2</sub> breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage-bias does not produce such a tuning effect but can restore the NPC response suppressed by the positive voltage-bias before a re-breakdown step. In samples with a non-metal (Si) electrode, the NPC tuning effect is absent indicating that a positively biased TiN electrode is needed to produce the tuning effect. We hypothesize that a positive voltage may induce the migration of Ti ions into the vacancy sites in the breakdown path. This then prevents the photo-assisted recombination of the interstitial-vacancy defect pairs, leading to a modulated NPC response. A negative voltage-bias expels the Ti ions back to the electrode and restores the NPC response.
ISSN:2168-6734