TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path
We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO<sub>2</sub> breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/7872399/ |
| _version_ | 1818853866169434112 |
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| author | Yu Zhou Tomohito Kawashima Diing Shenp Ang |
| author_facet | Yu Zhou Tomohito Kawashima Diing Shenp Ang |
| author_sort | Yu Zhou |
| collection | DOAJ |
| description | We present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO<sub>2</sub> breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage-bias does not produce such a tuning effect but can restore the NPC response suppressed by the positive voltage-bias before a re-breakdown step. In samples with a non-metal (Si) electrode, the NPC tuning effect is absent indicating that a positively biased TiN electrode is needed to produce the tuning effect. We hypothesize that a positive voltage may induce the migration of Ti ions into the vacancy sites in the breakdown path. This then prevents the photo-assisted recombination of the interstitial-vacancy defect pairs, leading to a modulated NPC response. A negative voltage-bias expels the Ti ions back to the electrode and restores the NPC response. |
| first_indexed | 2024-12-19T07:43:37Z |
| format | Article |
| id | doaj.art-5126356980684f5da5b7e622d77f2ca7 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-19T07:43:37Z |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-5126356980684f5da5b7e622d77f2ca72022-12-21T20:30:23ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015318819210.1109/JEDS.2017.26784697872399TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown PathYu Zhou0Tomohito Kawashima1Diing Shenp Ang2https://orcid.org/0000-0002-8139-1984School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeCorporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama, JapanSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeWe present new evidence that the non-volatile negative photoconductivity (NPC) response of the ZrO<sub>2</sub> breakdown path can be suppressed or tuned to different levels by repeated application of a positive voltage-bias on the TiN electrode prior to light exposure. A negative voltage-bias does not produce such a tuning effect but can restore the NPC response suppressed by the positive voltage-bias before a re-breakdown step. In samples with a non-metal (Si) electrode, the NPC tuning effect is absent indicating that a positively biased TiN electrode is needed to produce the tuning effect. We hypothesize that a positive voltage may induce the migration of Ti ions into the vacancy sites in the breakdown path. This then prevents the photo-assisted recombination of the interstitial-vacancy defect pairs, leading to a modulated NPC response. A negative voltage-bias expels the Ti ions back to the electrode and restores the NPC response.https://ieeexplore.ieee.org/document/7872399/High-k oxidenegative photoconductivityoptical sensorplasmonic sensorsoft electrical-breakdownsilicon dioxide |
| spellingShingle | Yu Zhou Tomohito Kawashima Diing Shenp Ang TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path IEEE Journal of the Electron Devices Society High-k oxide negative photoconductivity optical sensor plasmonic sensor soft electrical-breakdown silicon dioxide |
| title | TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path |
| title_full | TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path |
| title_fullStr | TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path |
| title_full_unstemmed | TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path |
| title_short | TiN-Mediated Multi-Level Negative Photoconductance of the ZrO<sub>2</sub> Breakdown Path |
| title_sort | tin mediated multi level negative photoconductance of the zro sub 2 sub breakdown path |
| topic | High-k oxide negative photoconductivity optical sensor plasmonic sensor soft electrical-breakdown silicon dioxide |
| url | https://ieeexplore.ieee.org/document/7872399/ |
| work_keys_str_mv | AT yuzhou tinmediatedmultilevelnegativephotoconductanceofthezrosub2subbreakdownpath AT tomohitokawashima tinmediatedmultilevelnegativephotoconductanceofthezrosub2subbreakdownpath AT diingshenpang tinmediatedmultilevelnegativephotoconductanceofthezrosub2subbreakdownpath |