Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown by metal-or...

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Bibliographic Details
Main Authors: Yves Mols, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais, Nadine Collaert, Robert Langer, Bernardette Kunert
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Materials
Subjects:
nano-ridge engineering (NRE)
III–V on Si
MOVPE
hetero-epitaxy
HBT
Online Access:https://www.mdpi.com/1996-1944/14/19/5682

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