A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier
A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is ve...
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| Format: | Article |
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MDPI AG
2016-04-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/16/4/532 |
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| author | De Xing Lioe Kamel Mars Shoji Kawahito Keita Yasutomi Keiichiro Kagawa Takahiro Yamada Mamoru Hashimoto |
| author_facet | De Xing Lioe Kamel Mars Shoji Kawahito Keita Yasutomi Keiichiro Kagawa Takahiro Yamada Mamoru Hashimoto |
| author_sort | De Xing Lioe |
| collection | DOAJ |
| description | A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10−5 is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed. |
| first_indexed | 2024-12-10T07:36:15Z |
| format | Article |
| id | doaj.art-51e6070ef4364fc9a6086a4334814364 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-12-10T07:36:15Z |
| publishDate | 2016-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-51e6070ef4364fc9a6086a43348143642022-12-22T01:57:25ZengMDPI AGSensors1424-82202016-04-0116453210.3390/s16040532s16040532A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in AmplifierDe Xing Lioe0Kamel Mars1Shoji Kawahito2Keita Yasutomi3Keiichiro Kagawa4Takahiro Yamada5Mamoru Hashimoto6Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, Shizuoka 432-8011, JapanResearch Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, Shizuoka 432-8011, JapanResearch Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, Shizuoka 432-8011, JapanResearch Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, Shizuoka 432-8011, JapanResearch Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, Shizuoka 432-8011, JapanGraduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, JapanGraduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, JapanA complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10−5 is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed.http://www.mdpi.com/1424-8220/16/4/532stimulated Raman scatteringCMOS image sensorlock-in amplifierlow frequency noisedouble modulationRaman shift |
| spellingShingle | De Xing Lioe Kamel Mars Shoji Kawahito Keita Yasutomi Keiichiro Kagawa Takahiro Yamada Mamoru Hashimoto A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier Sensors stimulated Raman scattering CMOS image sensor lock-in amplifier low frequency noise double modulation Raman shift |
| title | A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier |
| title_full | A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier |
| title_fullStr | A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier |
| title_full_unstemmed | A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier |
| title_short | A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier |
| title_sort | stimulated raman scattering cmos pixel using a high speed charge modulator and lock in amplifier |
| topic | stimulated Raman scattering CMOS image sensor lock-in amplifier low frequency noise double modulation Raman shift |
| url | http://www.mdpi.com/1424-8220/16/4/532 |
| work_keys_str_mv | AT dexinglioe astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT kamelmars astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT shojikawahito astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT keitayasutomi astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT keiichirokagawa astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT takahiroyamada astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT mamoruhashimoto astimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT dexinglioe stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT kamelmars stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT shojikawahito stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT keitayasutomi stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT keiichirokagawa stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT takahiroyamada stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier AT mamoruhashimoto stimulatedramanscatteringcmospixelusingahighspeedchargemodulatorandlockinamplifier |