Controlled formation of three-dimensional cavities during lateral epitaxial growth

Controlled formation of three-dimensional cavities during lateral epitaxial growth

Abstract Epitaxial growth is a fundamental step required to create devices for the semiconductor industry, enabling different materials to be combined in layers with precise control of strain and defect structure. Patterning the growth substrate with a mask before performing epitaxial growth offers...

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Bibliographic Details
Main Authors:	Yiwen Zhang, Baoming Wang, Changxu Miao, Haozhi Chai, Wei Hong, Frances M. Ross, Rui-Tao Wen
Format:	Article
Language:	English
Published:	Nature Portfolio 2024-03-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-024-46222-x

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