The barrier capacitance of n-SnS2/n-CdIn2Te4 heterojunction

The results of the study of the electrical characteristics of the n-SnS2/n-CdIn2Te4, obtained by a method of deposition over optical contact, have been presented. It is shown that the current-voltage characteristics and the capacitance-voltage (C-V) characteristics are typical for an abrupt heteroju...

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Bibliographic Details
Main Authors: O.G. Grushka, S. M. Chupyra, O.M. Myslyuk, O.M. Slyotov
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2022-08-01
Series:Фізика і хімія твердого тіла
Subjects:
Online Access:https://journals.pnu.edu.ua/index.php/pcss/article/view/5744