A Transient Bulging Phenomenon in Fast Doping Processes for p-n Junctions
During transient stages, under fast doping processes, the minor-carrier transport can affect the major-carrier counterpart in a peculiar manner. In this study, we have numerically detected occurrences of carrier-concentration bulges, which confine electrons both locally and instantaneously (for seve...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9133536/ |