Electronic and Photoelectronic Memristors Based on 2D Materials
Abstract Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data sto...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2022-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202101099 |
| _version_ | 1797542943428444160 |
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| author | Kai Tang Yang Wang Chuanhui Gong Chujun Yin Miao Zhang Xianfu Wang Jie Xiong |
| author_facet | Kai Tang Yang Wang Chuanhui Gong Chujun Yin Miao Zhang Xianfu Wang Jie Xiong |
| author_sort | Kai Tang |
| collection | DOAJ |
| description | Abstract Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed. |
| first_indexed | 2024-03-10T13:37:40Z |
| format | Article |
| id | doaj.art-5225843f4d544f68960620d2eadd20b8 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-10T13:37:40Z |
| publishDate | 2022-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-5225843f4d544f68960620d2eadd20b82023-11-21T07:01:06ZengWiley-VCHAdvanced Electronic Materials2199-160X2022-04-0184n/an/a10.1002/aelm.202101099Electronic and Photoelectronic Memristors Based on 2D MaterialsKai Tang0Yang Wang1Chuanhui Gong2Chujun Yin3Miao Zhang4Xianfu Wang5Jie Xiong6State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaInstitute of Microelectronics of Chinese Academy of Sciences Beijing 100029 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 ChinaAbstract Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed.https://doi.org/10.1002/aelm.2021010992D layered materialselectronic memristorneuromorphic computingphotoelectronic memristorvisual neural network |
| spellingShingle | Kai Tang Yang Wang Chuanhui Gong Chujun Yin Miao Zhang Xianfu Wang Jie Xiong Electronic and Photoelectronic Memristors Based on 2D Materials Advanced Electronic Materials 2D layered materials electronic memristor neuromorphic computing photoelectronic memristor visual neural network |
| title | Electronic and Photoelectronic Memristors Based on 2D Materials |
| title_full | Electronic and Photoelectronic Memristors Based on 2D Materials |
| title_fullStr | Electronic and Photoelectronic Memristors Based on 2D Materials |
| title_full_unstemmed | Electronic and Photoelectronic Memristors Based on 2D Materials |
| title_short | Electronic and Photoelectronic Memristors Based on 2D Materials |
| title_sort | electronic and photoelectronic memristors based on 2d materials |
| topic | 2D layered materials electronic memristor neuromorphic computing photoelectronic memristor visual neural network |
| url | https://doi.org/10.1002/aelm.202101099 |
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