Improved DRUS 4H-SiC MESFET with High Power Added Efficiency
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/1/35 |
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| author | Hujun Jia Yuan Liang Tao Li Yibo Tong Shunwei Zhu Xingyu Wang Tonghui Zeng Yintang Yang |
| author_facet | Hujun Jia Yuan Liang Tao Li Yibo Tong Shunwei Zhu Xingyu Wang Tonghui Zeng Yintang Yang |
| author_sort | Hujun Jia |
| collection | DOAJ |
| description | A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE). |
| first_indexed | 2024-12-13T07:43:01Z |
| format | Article |
| id | doaj.art-522fb601f9ed471398f64f0491cfc11b |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-13T07:43:01Z |
| publishDate | 2019-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-522fb601f9ed471398f64f0491cfc11b2022-12-21T23:54:55ZengMDPI AGMicromachines2072-666X2019-12-011113510.3390/mi11010035mi11010035Improved DRUS 4H-SiC MESFET with High Power Added EfficiencyHujun Jia0Yuan Liang1Tao Li2Yibo Tong3Shunwei Zhu4Xingyu Wang5Tonghui Zeng6Yintang Yang7School of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaA 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE).https://www.mdpi.com/2072-666X/11/1/354h-sic mesfetsimulationpower added efficiency (pae) |
| spellingShingle | Hujun Jia Yuan Liang Tao Li Yibo Tong Shunwei Zhu Xingyu Wang Tonghui Zeng Yintang Yang Improved DRUS 4H-SiC MESFET with High Power Added Efficiency Micromachines 4h-sic mesfet simulation power added efficiency (pae) |
| title | Improved DRUS 4H-SiC MESFET with High Power Added Efficiency |
| title_full | Improved DRUS 4H-SiC MESFET with High Power Added Efficiency |
| title_fullStr | Improved DRUS 4H-SiC MESFET with High Power Added Efficiency |
| title_full_unstemmed | Improved DRUS 4H-SiC MESFET with High Power Added Efficiency |
| title_short | Improved DRUS 4H-SiC MESFET with High Power Added Efficiency |
| title_sort | improved drus 4h sic mesfet with high power added efficiency |
| topic | 4h-sic mesfet simulation power added efficiency (pae) |
| url | https://www.mdpi.com/2072-666X/11/1/35 |
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