Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing...

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Bibliographic Details
Main Authors: Hujun Jia, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng, Yintang Yang
Format: Article
Language:English
Published: MDPI AG 2019-12-01
Series:Micromachines
Subjects:
4h-sic mesfet
simulation
power added efficiency (pae)
Online Access:https://www.mdpi.com/2072-666X/11/1/35

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